Abstract:The method established previously for studying the etching rates of micro-scale silicon and silica was used to study the etching process of silicon and silica on the Si(100) surface. Photolithography was used to pattern a positive photoresist mask to confine the etching area, and the atomic force microscopy was used to probe the etched surface. The lateral etching rate of silicon or silica on the silicon surface was defined, and the lateral and longitudinal etching rates of silicon and silica on the Si(100) surface in 40% ammonium fluoride aqueous solution were measured. The effect of the dissolved oxygen on the etching rates was studied by bubbling the solution with high purity nitrogen. The lateral and longitudinal etching rates of silicon and silica on the (100) surface increase with temperatures except for the lateral etching rate of silica in a N-2-bubbled solution which probably reaches the limit of diffusion controlled reaction. The etching rates of silicon and thermal silica on the Si(100) surface show remarkable difference with that on the Si (111) surface in both air-saturated and N-2-bubbled solutions. The apparent activation energies for the silicon and silica etching processing in ammonium fluoride solution were obtained from the etching rates at different temperatures in the range 20.6 similar to 34.1degreesC. The similarity of the apparent activation energies for the etching processing of silicon and silica on the (100) surface to that on the (111) surface probably suggests that the rate-determined-step is the same in both cases. A lot of gas bubbles are seen to aggregate on the surface in silicon dissolution process at 38.2degreesC, and it is found that the gas bubbles have great influence on the silicon etching rate. The formation of bubbles accelerates the silicon dissolution at the beginning but blocks the etching as the bubbles gradually aggregate on the surface.

Oxygen etching of the Si(100)-(2 × 1) surface

Subatmospheric chemical vapor deposition ozone/TEOS process for SiO2 trench filling

Identifying Atomic Geometry And Electronic Structure Of (2 X 3)-Sr/Si(100) Surface And Its Initial Oxidation

Combining Scanning Tunneling Microscope (STM) Imaging and Local Manipulation to Probe the High Dose Oxidation Structure of the Si(111)-7×7 Surface

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Identifying atomic geometry and electronic structure of (2×3)-Sr/Si(100) surface and its initial oxidation

The Lateral and Longitudinal Etching Rates of Silicon and Silica on Si(100) Surface

Study of Si and Ge growth on Si(100) surface

Room-temperature Atmospheric Oxidation of Si Nanocrystals after HF Etching

STM Study of Si(337) Surface

Structure of Reconstructed Cu(100) Surface Induced by Dissociative Adsorption of Gaseous Oxygen

Atomic force microscopy studies of SrTiO 3 (001) substrates treated by chemical etching and annealing in oxygen

A Density-Functional Theory Study on the Chemisorption and Stm Images of Ag(100)/O Surface

Theoretical Study on the Atomic Structure, Electronic States, and STM Image of C(2×2) Cu(001)/O Surface

Modeling the Initial Stages of Si(100) Thermal Oxidation: An Ab-initio Approach

Molecular Oxygen Adsorption Behaviors on the Rutile TiO2(110)-1×1 Surface: an in Situ Study with Low-Temperature Scanning Tunneling Microscopy

Role of oxygen in surface kinetics of SiO2 growth on single crystal SiC at elevated temperatures

STM and RHEED study of the Si(001)-c(8x8) surface

Oxygen Vacancy Induced Structure Change and Interface Reaction in HfO2 Films on Native SiO2/Si Substrate

Direct Observation of Ordered Structures During Oxidation of Si(111)

Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: A study by high resolution STM and in situ RHEED