Nanostructure phase and interface engineering via controlled Au self-assembly on GaAs(001) surface
A. Janas,B.R. Jany,K. Szajna,A. Kryshtal,G. Cempura,A. Kruk,F. Krok
DOI: https://doi.org/10.1016/j.apsusc.2019.06.204
IF: 6.7
2019-10-01
Applied Surface Science
Abstract:<p>We have investigated the temperature-dependent morphology and composition changes occurring during a controlled self-assembling of thin Au film on the Gallium arsenide (001) surface utilizing electron microscopy at nano and atomic levels. It has been found that the deposition of 2 ML of Au at a substrate temperature lower than 798 K leads to the formation of pure Au nanoislands. For the deposition at a substrate temperature of about 798 K the nanostructures of the stoichiometric AuGa phase were/had been grown. Gold deposition at higher substrate temperatures results in the formation of octagonal nanostructures composed of an AuGa<sub>2</sub> alloy. We have proved that the temperature-controlled efficiency of Au-induced etching-like of the GaAs substrate follows in a layer-by-layer manner leading to the enrichment of the substrate surface in gallium. The excess Ga together with Au forms liquid droplets which, while cooling the sample to room temperature, crystallize therein developing crystalline nanostructures of atomically-sharp interfaces with the substrate. The minimal stable cluster of 3 atoms and the activation energy for the surface diffusion E<sub>d</sub> = 0.816 ± 0.038 eV was determined. We show that by changing the temperature of the self-assembling process one can control the phase, interface and the size of the nanostructures formed.</p>
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films