Abstract:Erbium films were grown on single crystal Si(111) substrates by electron beam vapor deposition. The microstructures of the erbium films were systematically investigated by X-ray diffraction, scanning electron microscopy, and energy dispersive spectroscopy. Results indicate that the surface morphologies and microstructures of the erbium films with Si as substrates are susceptible to the substrate temperatures when the deposition rates are fixed. The pure erbium films with columnar grains were obtained at temperatures below 200 degrees C, but in the films grown at temperatures higher than 350 degrees C, some pinholes that are composed of erbium silicides were found. The pinholes have triangular shapes which is in accordance with the geometry of the underlying Si(111) substrate. The films grown at a substrate temperature equal or greater than 450 degrees C have cracks which would be formed due to the different shrinkage degree of erbium and silicon when the substrate temperature was cooled down to room temperature. The films grown at 200 degrees C show the (002) preferred orientation, which is consistent to the prediction by the theory of surface energy minimization. The deposition rate and deposition time are considered as factors to affect the reaction of the erbium film and the silicon substrate. (C) 2012 Elsevier Ltd. All rights reserved.

Growth of Erbium Silicide Nanowires on Si(001) Surface Studied by Scanning Tunneling Microscopy

From Nanowires To Nanoislands: Morphological Evolutions Of Erbium Silicide Nanostructures Formed On The Vicinal Si(001) Surface

Formation and Evolution of Erbium Silicide Nanowires on Vicinal and Flat Si(001)

Ultrafast growth of single-crystalline Si nanowires

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Surface structures of erbium silicide ultra-thin films formed by solid phase epitaxy on Si(100)

Erbium Induced Reconstructions On Silicon (100) Substrate

Study of Si and Ge growth on Si(100) surface

Photoemission Study of the Initial Stage of Er/Si(100) Interface Formation

Epitaxial Growth of Manganese Silicide Nanowires on Si(111)-7×7 Surfaces

Influence of Growth Parameters on the Microstructures of Erbium Films Deposited on Si(111) Substrates

Effect of erbium interlayer on nickel silicide formation on Si(100)

Transmission electron microscopy characterization of the erbium silicide formation process using a Pt/Er stack on a silicon-on-insulator substrate

Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.

Resistivity Measurements of Self-Assembled Epitaxially Grown Erbium Silicide Nanowires

Epitaxial growth of Si(111)/Er2O3 (111) structure on Si(111) by molecular beam epitaxy

Effects of Er Atoms on Graphitization Process and Structural Defects for Epitaxial Graphene

Synthesis and Microstructure of Epitaxial SiC Nanowires

The growth of Si overlayers on Er2O3 (111)/Si (111) by solid phase epitaxy

Field Emission Study Of Sic Nanowires/Nanorods Directly Grown On Sic Ceramic Substrate

Epitaxial growth of Er2O3 films on oxidized Si(111) and Si(001) substrates