Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Epitaxial Growth of Manganese Silicide Nanowires on Si(111)-7×7 Surfaces

Self-organized growth of higher manganese silicide nanowires on Si(111), (110) and (001) surfaces

Scanning Tunneling Microscopy Studies Of The Formation And Coarsening Of Manganese Silicides On Si(111)

Ultrafast growth of single-crystalline Si nanowires

Reactive Epitaxial Growth of Manganese and Manganese Silicide on Si(100)

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Epitaxy of Mn on Si(001): Adsorption, Surface Diffusion, and Magnetic Properties Studied by Density-Functional Theory

Structure and Orientation Analysis of Iron Silicide Epitaxially Grown on Si Substrates

Self-organized Growth of Mn Nanocluster Arrays on Si(111)-(7×7) Surfaces

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Epitaxial Growth of Vertically Free-Standing Ultra-Thin Silicon Nanowires.

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Growth of Erbium Silicide Nanowires on Si(001) Surface Studied by Scanning Tunneling Microscopy

Spontaneous Formation of Mn Nanocluster Arrays on A Si(111)-7x7 Surface Observed with Stm

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Higher manganese silicide nanowires of Nowotny chimney ladder phase

Scanning Tunneling Microscopy Observation of Surface Superstructures During the Growth of in on In/Si(111) Surface

Atomic-scale Morphology and Electronic Structure of Manganese Atomic Layers Underneath Epitaxial Graphene on SiC(0001).

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

From Nanowires To Nanoislands: Morphological Evolutions Of Erbium Silicide Nanostructures Formed On The Vicinal Si(001) Surface