Abstract:The growth behavior and morphology evolution of erbium silicide nanostructures are studied on the vicinal Si(001) surface with a 4 degrees miscut angle towards the [110] direction as the functions of annealing temperature, annealing time, and Er coverage. Three kinds of nanostructures can be observed on the surface: nanowires, rectangular nanoislands and square nanoislands. The experimental results reveal that nanowires in AlB2-type structure and the nanoislands in ThSi2-type structure can be formed at 600-650 and 700-750 degrees C, respectively. At the final growth stage, the nanowires of erbium silicide undergo Ostwald ripening. At high coverage of two monolayers, many AlB2-type nanoislands will appear in a rectangular shape on the sample surface. According to the AlB2-type crystalline structure of ErSi2 and the scanning tunneling microscopy results obtained on the flat and vicinal substrate surfaces, a model is suggested to describe the ErSi2/Si(001) interfacial structure. This model explains the spatial orientation relationship between erbium silicide nanowire and Si dimer row, and is consistent with Er-induced (2x3) reconstruction at the initial stage of Er growth on the Si(001) surface. (c) 2006 American Institute of Physics.

Erbium Silicide Nanostructures Self-Assembled on Si(001) by Cyclic Growth

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Thermal Stability and Growth Behavior of Erbium Silicide Nanowires Self-Assembled on a Vicinal Si(OOl) Surface

Effect of Multiple Depositions and Annealing Treatments on the Erbium Silicide Nanoislands Self-Assembled on Si(OOl) Substrates

From Nanowires To Nanoislands: Morphological Evolutions Of Erbium Silicide Nanostructures Formed On The Vicinal Si(001) Surface

RARE-EARTH METAL SILICIDE NANOSTRUCTURES ON Si(001) SURFACE

Crystalline Structures and Misfit Strain Inside Er Silicide Nanocrystals Self-Assembled on Si(001) Substrates

Growth of Erbium Silicide Nanowires on Si(001) Surface Studied by Scanning Tunneling Microscopy

Surface structures of erbium silicide ultra-thin films formed by solid phase epitaxy on Si(100)

Self‐Assembled Si Quantum‐Ring Structures on a Si Substrate by Plasma‐Enhanced Chemical Vapor Deposition Based on a Growth‐Etching Competition Mechanism

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Crystal growth of ferroelectric PbTiO 3 nanocrystals on silicon substrate via intermediates

Controlled Formation of GeSi Nanostructures on Periodic Si (001) Sub-Micro Pillars.

Formation and Photoluminescence Characteristics of Er-related Nanostructures on Si(001) Substrate Covered with an Ultrathin SiO2 Film

Formation and Evolution of Erbium Silicide Nanowires on Vicinal and Flat Si(001)

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Self-Assembled Nisi Quantum-Dot Arrays On Epitaxial Si0.7ge0.3 On (001)Si

Surface-mediated Tunable Self-Assembly of Single Crystal Semimetallic ErSb/GaSb Nanocomposite Structures.

Growth and Morphology of One-Dimensional SiC Nanostructures Without Catalyst Assistant

Self-Controlled Synthesis of Microscale Silicide Embossments and Pits with Multi-Shape and Orientation

Structural Understanding of Self-Assembled Rare Earth Disilicide Nanostructures Via Scanning Probe Microscopy and First Principles Studies