Abstract:Abstract Low-dimensional semiconductor structurers formed on a substrate surface at pre-defined locations and with nano-precision placement is of vital interest. The potential of tailoring their electrical and optical properties will revolutionize the next generation of optoelectronic devices. Traditionally, highly aligned self-assembly of semiconductors relies on Stranski- Krastanov growth mode. In this work, we demonstrate a pathway towards ordered configuration of Ge islands on low lattice mismatch GaAs (110) substrate patterned using depth-controlled nanoindentation. Diamond probe tips with different geometries are used to nano-mechanically stamp the surface of GaAs (110). This creates nanoscale volumes of dislocation-mediated deformation which acts to bias nucleation. Results show that nanostamped GaAs exhibits selective-nucleation of Ge at the indent sites. Ge islands formed on a surface patterned using cube corner tip have height of ~10 nm and lateral size of ~225 nm. Larger islands are formed by using Vickers and Berkovich diamond tips (~400 nm). The strain state of the patterned structures is characterized by micro-Raman spectroscopy. A strain value up to 2% for all tip geometries has been obtained. Additionally, strong room temperature photoluminescence (PL) emission is observed around 1.9 μm (650 meV). The observed strain-induced enhancement in the light-emission efficiency is attributed to direct conduction to heavy-hole (cΓ-HH) and conduction to light-hole (cΓ-LH) transitions. The inherent simplicity of the proposed method offers an attractive technique to manufacture semiconductor quantum dot structures for future electronic and photonic applications.

Surface-mediated Tunable Self-Assembly of Single Crystal Semimetallic ErSb/GaSb Nanocomposite Structures.

Self-assembled ErSb Nanostructures of Tunable Shape and Orientation: Growth and Plasmonic Properties

Vertical Heterostructures of Layered Metal Chalcogenides by Van Der Waals Epitaxy.

Controlled Self-Assembly of Nanoscale Superstructures in Phase-Change Ge-Sb-Te Nanowires

Particle-Catalyst-Free Vapor-Liquid-Solid Growth of Millimeter-Scale Crystalline Compound Semiconductors on Nonepitaxial Substrates

Self-Assembled Ersb Nanostructures with Optical Applications in Infrared and Terahertz

Vapor-liquid-solid growth of highly-mismatched semiconductor nanowires with high-fidelity van der Waals layer stacking

Epitaxy of Semiconductor-Superconductor nanowires

Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer

Spatioselective Growth on Homogenous Semiconductor Substrates by Surface State Modulation

Direct van der Waals epitaxial growth of 1D/2D Sb2Se3/WS2 mixed-dimensional p-n heterojunctions

Mechanical Nano-Patterning: Toward Highly-Aligned Ge Self-Assembly on Low Lattice Mismatched GaAs Substrate

The Self-Catalyzed Growth of GaAsSb Nanowires on a Si (111) Substrate Using Molecular-Beam Epitaxy

Large-area arrays of epitaxially aligned silver nanotriangles seeded by gold nanostructures

Tailoring Heterostructure Growth on Liquid Metal Nanodroplets through Interface Engineering

Engineering Heterostructured Semiconductor Nanorod Assemblies via Controlled Cation Exchange: Implications for Efficient Optoelectronics

Tailoring Semiconductor Lateral Multijunctions for Giant Photoconductivity Enhancement.

Glucose Assisted Synthesis and Growth Mechanism of Hierarchical Antimony Chalcogenides

Controlled growth of high-density CdS and CdSe nanorod arrays on selective facets of two-dimensional semiconductor nanoplates

Surface lattice engineering for fine-tuned spatial configuration of nanocrystals

Self‐Assembled Pb Nanostructures on Si(111) Surfaces: from Nanowires to Nanorings