[Eczema caused by contact allergy to drugs in nursing personnel].

F. Woringer,J. Foussereau,M. Batt

1963-01-12

Abstract:

What problem does this paper attempt to address?

Synthesis and characterization of phase-change nanowires.

Stefan Meister,Hailin Peng,Kevin McIlwrath,Konrad Jarausch,Xiao Feng Zhang,Yi Cui

DOI: https://doi.org/10.1021/nl061102b

IF: 10.8

2006-01-01

Nano Letters

Abstract:Phase-change memory materials have stimulated a great deal of interest although the size-dependent behaviors have not been well studied due to the lack of method for producing their nanoscale structures. We report the synthesis and characterization of GeTe and Sb2Te3 phase-change nanowires via a vapor-liquid-solid growth mechanism. The as-grown GeTe nanowires have three different types of morphologies: single-crystalline straight and helical rhombohedral GeTe nanowires and amorphous curly GeO2 nanowires. All the Sb2Te3 nanowires are single-crystalline.
Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Wenna Du,Xiaoguang Yang,Huayong Pan,Xianghai Ji,Haiming Ji,Shuai Luo,Xingwang Zhang,Zhanguo Wang,Tao Yang

DOI: https://doi.org/10.1021/acs.nanolett.5b03587

IF: 10.8

2016-01-01

Nano Letters

Abstract:We describe the controlled growth of planar InAsSb nanowires (NWs) on differently oriented Si substrates without any foreign catalysts. Interestingly, the planar InAsSb NWs grew along four criss-crossed (110) directions on an [100]-oriented substrate, two (100) directions plus four (111) directions on an [110]-oriented substrate, and six equivalent (112) directions on an [111]-oriented substrate, which correspond to the projections of (111) family crystal directions on the substrate planes. High-resolution transmission electron microscopy (HRTEM) reveals that the NWs, experienced a transition from out-of-plane to in-plane growth at the early growth stage but still occurred on the {111} plane, which has the lowest surface energy among all the surfaces. Furthermore, the NWs exhibit a pure zinc-blende crystal structure without any defects. A growth model is presented to explain growth of the NWs. In addition, conductive atomic force microscopy shows that electrically rectifying p-n junctions form naturally between the planar InAsSb NWs and the p-type Si substrates. The results presented here could open up a new route way to fabricate highly integrated III-V nanodevices.
Phase Selection Enabled Formation of Abrupt Axial Heterojunctions in Branched Oxide Nanowires.

Jing Gao,Oleg I. Lebedev,Stuart Turner,Yong Feng Li,Yun Hao Lu,Yuan Ping Feng,Philippe Boullay,Wilfrid Prellier,Gustaaf van Tendeloo,Tom Wu

DOI: https://doi.org/10.1021/nl2035089

IF: 10.8

2011-01-01

Nano Letters

Abstract:Rational synthesis of nanowires via the vapor-liquid-solid (VLS) mechanism with compositional and structural controls is vitally important for fabricating functional nanodevices from bottom up. Here, we show that branched indium tin oxide nanowires can be in situ seeded in vapor transport growth using tailored Au-Cu alloys as catalyst. Furthermore, we demonstrate that VLS synthesis gives unprecedented freedom to navigate the ternary In-Sn-O phase diagram, and a rare and bulk-unstable cubic phase can be selectively stabilized in nanowires. The stabilized cubic fluorite phase possesses an unusual almost equimolar concentration of In and Sn, forming a defect-free epitaxial interface with the conventional bixbyite phase of tin-doped indium oxide that is the most employed transparent conducting oxide. This rational methodology of selecting phases and making abrupt axial heterojunctions in nanowires presents advantages over the conventional synthesis routes, promising novel composition-modulated nanomaterials.
Self-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices

Fei Gao,Jian-Huan Wang,Hannes Watzinger,Hao Hu,Marko J. Rančić,Jie-Yin Zhang,Ting Wang,Yuan Yao,Gui-Lei Wang,Josip Kukučka,Lada Vukušić,Christoph Kloeffel,Daniel Loss,Feng Liu,Georgios Katsaros,Jian-Jun Zhang

DOI: https://doi.org/10.48550/arXiv.2001.11305

2020-01-30

Mesoscale and Nanoscale Physics

Abstract:Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site-controlled nanowires is a prerequisite towards the next generation of devices that will require addressability and scalability. Here, combining top-down nanofabrication and bottom-up self-assembly, we report on the growth of Ge wires on pre-patterned Si (001) substrates with controllable position, distance, length and structure. This is achieved by a novel growth process which uses a SiGe strain-relaxation template and can be generalized to other material combinations. Transport measurements show an electrically tunable spin-orbit coupling, with a spin-orbit length similar to that of III-V materials. Also, capacitive coupling between closely spaced wires is observed, which underlines their potential as a host for implementing two qubit gates. The reported results open a path towards scalable qubit devices with Si compatibility.
Phase-Change Nanowires for Non Volatile Memory

Cui Yi,Meister Stefan,Peng Hailin

DOI: https://doi.org/10.1557/proc-0997-i11-06

2007-01-01

Abstract:We report the synthesis of GeTe, Sb2Te3 and Ge2Sb2Te5 nanowires via a gold-catalyzed vapor-liquid-solid mechanism. The nanowires are studied via electron microscopy and energy-dispersive X-ray spectrometry and are found to be single crystalline. For electrical measurements contact to individual nanowires is made via electron-beam lithography. The nanowires can be switched from their initially low resistance state to a higher resistance state by applying a 200ns voltage pulse. Switching back to the low resistance state is possible via annealing. Electric force microscopy studies show the switching takes place at the metal-nanowire contact.
Control of Ge island coalescence for the formation of nanowires on silicon.

Santhanu Panikar Ramanandan,Joel Reñé Sapera,Alban Morelle,Sara Martí-Sánchez,Alok Rudra,Jordi Arbiol,Vladimir G. Dubrovskii,Anna Fontcuberta i Morral,Sara Martí Martí-Sánchez

DOI: https://doi.org/10.1039/d3nh00573a

2024-02-13

Nanoscale Horizons

Abstract:Germanium nanowires could be the building blocks of hole-spin qubit quantum computers. Selective area epitaxy enables the direct integration of Ge nanowires on a silicon chip while controlling the device design, density, and scalability. For this to become a reality, it is essential to understand and control the initial stages of the epitaxy process. In this work, we highlight the importance of surface treatment in the reactor prior to growth to achieve high crystal quality and connected Ge nanowire structures. In particular, we demonstrate that exposure to AsH3 during the high-temperature treatment enhances lateral growth of initial Ge islands and promotes faster formation of continuous Ge nanowires in trenches. The Kolmogorov-Johnson-Mehl-Avrami crystallization model supports our explanation of Ge coalescence. These results provide critical insight into the selective epitaxy of horizontal Ge nanowires on lattice-mismatched Si substrates, which can be translated to other material systems.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
A nano-droplet hydrodynamic transformation of uniform amorphous bilayer into highly modulated Ge/Si island-chains.

Yaolong Zhao,Haiguang Ma,Taige Dong,Junzhuan Wang,Linwei Yu,Jun Xu,Yi Shi,Kunji Chen,Pere Roca I Cabarrocas

DOI: https://doi.org/10.1021/acs.nanolett.8b02847

IF: 10.8

2018-01-01

Nano Letters

Abstract:Geometric and compositional modulations are the principal parameters of control to tailor the band profile in germanium/silicon (Ge/Si) heteronanowires (NWs). This has been achieved mainly by alternating the feeding precursors during a uniaxial growth of Ge/Si NWs. In this work, a self-automated growth of Ge/Si hetero island-chain nanowires (hiNWs), consisting of wider c-Ge islands connected by thinner c-Si chains, has been accomplished via an indium (In) droplet-mediated transformation of uniform amorphous a-Si/a-Ge bilayer thin films. The surface-running In droplet enforces a circulative hydrodynamics in the nanoscale droplet, which can modulate the absorption depth into the amorphous bilayer and enable a single-run growth of a superlattice-like hiNWs without the need for any external manipulation. Meanwhile, the separation and accumulation of electrons and holes in the phase-modulated Ge/Si superlattice leads to a modulated surface potential profile that can be directly resolved by Kelvin probe force microscopy. This simple self-assembly growth and modulation dynamics can help to establish a powerful new concept or strategy to tailor and program the geometric and compositional profiles of more complex hetero nanowire structures, as promising building blocks to develop advanced nanoelectronics or optoelectronics.
Axially Segmented Semiconductor Heteronanowires

Yi Li,Tao-Tao Zhuang,Chong Zhang,Liang Wu,Shi-Kui Han,Shu-Hong Yu

DOI: https://doi.org/10.1021/accountsmr.0c00004

2020-01-01

Accounts of Materials Research

Abstract:Programming nanoscale functional objects into complex, sophisticated heterostructures that tremendously outperform their solo objects and even bring about exotic chemical/physical properties offers exciting routes toward a spectrum of applications in photonics and electronics. The development in synthetic chemistry over past decades has enabled a library of hybrid nanostructures, such as core-shell, patchy, dimer, hierarchical/branched ones, etc. Nevertheless, the material combinations of these non-van der Waals solids are largely limited by the rule of lattice-matched epitaxy thereof. As an emerging class of heterostructures, axially segmented nanowires (ASNWs) offer an alternative but effective approach to epitaxially integrating the conventional non-van der Waals solids. The large lattice-mismatch tolerance in ASNWs permits vast material combinations, broad size modulations, and flexible interfacial strain engineering, signifying the great potentials for engineering their photon utilizations, band structures, features of charge carriers or excitons, and some other emerging properties. Unfortunately, ASNWs with on-demand, high-precision control over composition, shape, dimension, crystal phase, interface, and periodicity remain so far synthetically challenging. By steering the chemoselective reactions, one has access to high-precision ASNWs. In this Account, we describe the state-of-the-art synthetic strategies for chemoselectivity control. We categorize them into (i) unidirectional/bidirectional sequential additions, which include selective area epitaxy, catalyzed growth, and end-facet-seeded growth, and (ii) regiospecific one-off transformations, which include ionic exchange reaction, strain/thermal induced phase segregation and transition, Plateau-Rayleigh instability, regioselective heterogeneous nucleation as ruled by lattice match, defect, and surface charges, and nanomasking. We uncover the chemical principles behind from thermodynamic and kinetic aspects. Then we further offer insights into their fundamental physics (including carrier/photon/phonon confinement, mixed dimensionality, quantum dot-nanowire interaction, and interdot coupling effect) that are strongly correlated with a spectrum of applications, highlighting how the precise control of compositions and structures ultimately dictates their properties and functions. In the end, we conclude by describing current challenges and future directions of this field in terms of material synthesis, growth mechanism, exotic physics, and performance optimization. By crafting ASNWs at atomic precision, high-performance ASNWs with sophisticated electronic and phonon structures can be envisioned ultimately for applications in diverse fields, spanning from solar energy conversion and thermoelectrics to optoelectronics and quantum communications.
Surface-mediated Tunable Self-Assembly of Single Crystal Semimetallic ErSb/GaSb Nanocomposite Structures.

Jason K. Kawasaki,Brian D. Schultz,Hong Lu,Arthur C. Gossard,Chris J. Palmstrom

DOI: https://doi.org/10.1021/nl4012563

IF: 10.8

2013-01-01

Nano Letters

Abstract:Arrays of metallic nanostructures embedded within a semiconducting matrix are of great interest for applications in plasmonics, photonic crystals, thermoelectrics, and nanoscale ohmic contacts. We report a method for growing single crystal arrays of semimetallic vertical and horizontal ErSb nanorods, nanotrees, and nanosheets embedded within a semiconducting GaSb matrix. The nanostructures form simultaneously with the matrix and have epitaxial, coherent interfaces with no evidence of stacking faults or dislocations as observed by high-resolution transmission electron microscopy. By combining molecular beam epitaxy growth and in situ scanning tunneling microscopy, we image the growth surface one atomic layer at a time and show that the nanostructured composites form via a surface-mediated self-assembly mechanism that is controlled entirely at the growth front and is not a product of bulk diffusion or bulk segregation. These highly tunable nanocomposites show promise for direct integration into epitaxial semiconductor device structures and also provide a unique system in which to study the atomic scale mechanisms for nucleation and growth.
Epitaxy of Semiconductor-Superconductor nanowires

P. Krogstrup,N. L. B. Ziino,W. Chang,S. M. Albrecht,M. H. Madsen,E. Johnson,J. Nygård,C. M. Marcus,T. S. Jespersen

DOI: https://doi.org/10.1038/nmat4176

2014-11-26

Abstract:Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role for the quality of the induced superconducting gap. Here we present epitaxial growth of semiconductor-metal core-shell nanowires by molecular beam epitaxy, a method that provides a conceptually new route to controlled electrical contacting of nanostructures and for designing devices for specialized applications such as topological and gate-controlled superconducting electronics. Our materials of choice, InAs/Al, are grown with epitaxially matched single plane interfaces, and alternative semiconductor/metal combinations allowing epitaxial interface matching in nanowires are discussed. We formulate the grain growth kinetics of the metal phase in general terms of continuum parameters and bicrystal symmetries. The method realizes the ultimate limit of uniform interfaces and appears to solve the soft-gap problem in superconducting hybrid structures.

Materials Science,Mesoscale and Nanoscale Physics,Superconductivity
Phase Selection in Self-catalyzed GaAs Nanowires

Federico Panciera,Zhaslan Baraissov,Gilles Patriarche,Vladimir G Dubrovskii,Frank Glas,Laurent Travers,Utkur Mirsaidov,Jean-Christophe Harmand

DOI: https://doi.org/10.1021/acs.nanolett.9b04808

2020-03-11

Abstract:Crystal phase switching between the zincblende and wurtzite structures in III-V nanowires is crucial from the fundamental viewpoint as well as for electronic and photonic applications of crystal phase heterostructures. Here, the results of in situ monitoring of self-catalyzed vapor-liquid-solid growth of GaAs nanowires by molecular beam epitaxy inside a transmission electron microscope are presented. It is demonstrated that the occurrence of the zincblende or wurtzite phase in self-catalyzed nanowires is determined by the sole parameter, the droplet contact angle, which can be finely tuned by changing the group III and V fluxes. The zincblende phase forms at small (<100°) and large (>125°) contact angles, whereas pure wurtzite phase is observed for intermediate contact angles. Wurtzite nanowires are restricted by vertical sidewalls, whereas zincblende nanowires taper or develop the truncated edge at their top. These findings are explained within a dedicated model for the surface energetics. These results give a clear route for the crystal phase control in Au-free III-V nanowires. On a more general note, in situ growth monitoring with atomic resolution and at the technological-relevant growth rates is shown to be a powerful tool for the fine-tuning of material properties at the nanoscale.
Morphology Control of Indium Germanate Nanowires, Nanoribbons, and Hierarchical Nanostructures

Chaoyi Yan,N. Singh,Pooi See Lee

DOI: https://doi.org/10.1021/cg900406d

2009-01-01

Abstract:We report morphology controlled syntheses of indium germanate nanostructures, including nanowires, ultralong nanoribbons, and hierarchical nanostructures. Proper selection and combination of the growth conditions such as catalyst, carrier gas, and source material was the key aspect to achieve morphology control. The as-synthesized nanostructures are single crystals with a monoclinic phase based on X-ray diffraction, scanning electron microscopy, and transmission electron microscopy characterizations. Vapor−liquid−solid, vapor−solid, and a combination of the two mechanisms were used to explain the growth of nanowires, nanoribbons, and hierarchical nanostructures, respectively.
Controlled Vapor-Liquid-Solid Growth of Long and Remarkably Thin Pb 1- x Sn x Te Nanowires with Strain-Tunable Ferroelectric Phase Transition

T. X. Zhang,B. Samanta,J. Wang,A. B. Georgescu,H. A. Fertig,S. X. Zhang

DOI: https://doi.org/10.1021/acsami.4c11537

IF: 9.5

2024-09-29

ACS Applied Materials & Interfaces

Abstract:The Pb(1-x)Sn(x)Te family of compounds possess a wide range of intriguing and useful physical properties, including topologically protected surface states, robust ferroelectricity, remarkable thermoelectric properties, and potential topological superconductivity. Compared to bulk crystals, one-dimensional (1D) nanowires (NWs) offer a unique platform to enhance the functional properties and enable new capabilities, e.g., to realize 1D Majorana zero modes for quantum computations. However, it has...

materials science, multidisciplinary,nanoscience & nanotechnology
Catalyzed Growth for Atomic-Precision Colloidal Chalcogenide Nanowires and Heterostructures: Progress and Perspective.

Yi Li,Zhen-Chao Shao,Chong Zhang,Shu-Hong Yu

DOI: https://doi.org/10.1021/acs.jpclett.1c02358

2021-01-01

Abstract:One-dimensional colloidal semiconductor nanowires are of wide interest in nanoscale electronics and photonics. As compared to the zero-dimensional counterparts, their geometrical anisotropy offers an additional degree of freedom to tailor the electronic and optical properties and enables customized heterostructures with increased complexity. The colloidal synthetic chemistry developed over past decades has fueled the emergence of diverse one-dimensional nanocrystals and heterostructures, whereas the synthetic pursuit for compositionally and structurally defining them at the atomic-level precision remains yet a giant challenge. Catalyzed growth, wherein nanowires grow at the catalyst-nanowire interfaces in a layer-by-layer manner, offers a promising path toward such an ultimate goal. In this Perspective, we will take a close look at how catalyzed growth would enable the on-demand, atomic-precision control of colloidal nanowires and their heterostructures. We then further highlight their potentials for constructing higher-order heteroarchitectures with new and/or enhanced performances. Finally, we conclude with a forward-looking perspective on future challenges.
Phosphorus-Controlled Nanoepitaxy in the Asymmetric Growth of GaAs-InP Core-Shell Bent Nanowires

Spencer McDermott,Trevor R. Smith,Ray R. LaPierre,Ryan B. Lewis

2023-05-15

Abstract:Breakthroughs extending nanostructure engineering beyond what is possible with current fabrication techniques will be crucial for enabling next-generation nanotechnologies. Nanoepitaxy of strain-engineered bent nanowire heterostructures presents a promising platform for realizing bottom-up and scalable fabrication of nanowire devices. The synthesis of these structures requires the selective asymmetric deposition of lattice-mismatched shells-a complex growth process which is not well understood. We present the nanoepitaxial growth of GaAs-InP core-shell bent nanowires and connecting nanowire pairs to form nano-arches. Compositional analysis of nanowire cross-sections reveals the critical role of adatom diffusion in the nanoepitaxial growth process, which leads to two distinct growth regimes: indium-diffusion limited growth and phosphorous-limited growth. The highly controllable phosphorous-limited growth mode is employed to synthesize connected nanowire pairs and quantify the role of flux shadowing on the shell growth process. These results provide important insight into three-dimensional nanoepitaxy and enable new possibilities for nanowire device fabrication.

Applied Physics
Chemical Vapor Deposition Growth of Single-Walled Carbon Nanotubes with Controlled Structures for Nanodevice Applications.

Yabin Chen,Jin Zhang

DOI: https://doi.org/10.1021/ar400314b

IF: 24.466

2014-01-01

Accounts of Chemical Research

Abstract:Single-walled carbon nanotubes (SWNTs), a promising substitute to engineer prospective nanoelectronics, have attracted much attention because of their superb structures and physical properties. The unique properties of SWNTs rely sensitively on their specific chiral structures, including the diameters, chiral angles, and handedness. Furthermore, high-performance and integrated circuits essentially require SWNT samples with well-aligned arrays, of single conductive type and of pure chirality. Although much effort has been devoted to chemical vapor deposition (CVD) growth of SWNTs, their structure control, growth mechanism, and structural characterizations are still the primary obstacles for the fabrication and application of SWNT-based nanodevices. In this Account, we focus on our established CVD growth methodology to fulfill the requirements of nanodevice applications. A rational strategy was successfully exploited to construct complex architectures, selectively enrich semiconducting (s) or metallic (m) SWNTs, and control chirality. First, well-aligned and highly dense SWNT arrays are beneficial for nanodevice integration. For the directed growth mode, anisotropic interactions between the SWNTs and the crystallographic structure of substrate are crucial for their growth orientation. Just as crystals possess various symmetries, SWNTs with controlled geometries have the corresponding turning angles. Their complex architectures come from the synergetic effect of lattice and gas flow directed modes. Especially, the aligned orientations of SWNTs on graphite are chirality-selective, and their chiral angles, handedness, and (n,m) index have been conveniently and accurately determined. Second, UV irradiation and sodium dodecyl sulfate (SDS) washing-off methods have been explored to selectively remove m-SWNTs, leaving only s-SWNT arrays on the surface. Moreover, the UV-assisted technique takes the advantages of low cost and high efficiency and it directly produces a high ratio of s-SWNT arrays. We also designed a smart scotch tape to sort out the s-SWNTs and m-SWNTs from the as-grown mixture with 3-aminopropyl-triethoxysilane and triethoxyphenylsilane as glues, respectively. This is analogous to the mechanical exfoliation of a graphene sheet. Third, the obtained SWNT intramolecular junctions obtained by temperature-mediated CVD indicate that temperature can seriously affect the SWNT's chirality during its growth. Importantly, the cloning method can validate the chirality-controlled growth of SWNTs, and the cloning efficiency is significantly improved on a quartz surface. Well-aligned SWNT arrays with a high density and controlled structures are highly desirable for carbon nanoelectronics. We hope that the advanced methodology used here will promote their controlled preparation and provide insights into the growth mechanism of SWNTs.
Laser-Driven Growth of Semiconductor Nanowires from Colloidal Nanocrystals via the Young-Laplace Effect

Elena P. Pandres,Matthew J. Crane,E. James Davis,Peter J. Pauzauskie,Vincent C. Holmberg

DOI: https://doi.org/10.48550/arXiv.2007.09305

2020-07-18

Abstract:The ability to produce nanowires through vapor- and solution-based processes has propelled nanowire material systems toward a wide range of technological applications. Conventional, vapor-based nanowire syntheses have enabled precise control over nanowire composition and phase. However, vapor-based nanowire growth employs batch processes with specialized pressure management systems designed to operate at high temperatures, limiting throughput. More recently developed solution-based nanowire growth processes have improved scalability but can require even more extensive pressure and temperature management systems. Here, we demonstrate a continuous-flow, solution-based nanowire growth process that utilizes the large Young-Laplace interfacial surface pressures and collective heating effects of colloidal metal nanocrystals under irradiation to drive semiconductor nanowire growth photothermally without the need for high-pressure or high-temperature equipment. In this process, a laser irradiates a solution containing metal nanocrystals and semiconductor precursors. Upon light absorption, the metal nanocrystals heat rapidly, inducing semiconductor precursor decomposition and nanowire growth. This process is performed on a benchtop in simple glassware under standard conditions. To demonstrate the generality of this technique, we synthesized three distinct semiconductor nanowire material systems: bismuth-seeded germanium nanowires, bismuth-seeded cadmium selenide nanowires, and indium-seeded germanium nanowires. The simplicity and versatility of this process opens the door to a range of experiments and technologies including in-line combinatorial identification of optimized reaction parameters, in situ spectroscopic measurements to study solution-based nanowire growth, and the potential production of nanowires with complex compositions or rationally incorporated dopants.

Applied Physics,Mesoscale and Nanoscale Physics
3D Shape Reconstruction of Ge Nanowires during Vapor-Liquid-Solid Growth under Modulating Electric Field

Ivan Erofeev,Khakimjon Saidov,Zhaslan Baraissov,Hongwei Yan,Jean-Luc Maurice,Federico Panciera,Utkur Mirsaidov

DOI: https://doi.org/10.1021/acsnano.4c00087

IF: 17.1

2024-08-12

ACS Nano

Abstract:Bottom-up growth offers precise control over the structure and geometry of semiconductor nanowires (NWs), enabling a wide range of possible shapes and seamless heterostructures for applications in nanophotonics and electronics. The most common vapor-liquid-solid (VLS) growth method features a complex interaction between the liquid metal catalyst droplet and the anisotropic structure of the crystalline NW, and the growth is mainly orchestrated by the triple-phase line (TPL). Despite the intrinsic mismatch between the droplet and the NW symmetries, its discussion has been largely avoided because of its complexity, which has led to the situation when multiple observed phenomena such as NW axial asymmetry or the oscillating truncation at the TPL still lack detailed explanation. The introduction of an electric field control of the droplet has opened even more questions, which cannot be answered without properly addressing three-dimensional (3D) structure and morphology of the NW and the droplet. This work describes the details of electric-field-controlled VLS growth of germanium (Ge) NWs using environmental transmission electron microscopy (ETEM). We perform TEM tomography of the droplet-NW system during an unperturbed growth, then track its evolution while modulating the bias potential. Using 3D finite element method (FEM) modeling and crystallographic considerations, we provide a detailed and consistent mechanism for VLS growth, which naturally explains the observed asymmetries and features of a growing NW based on its crystal structure. Our findings provide a solid framework for the fabrication of complex 3D semiconductor nanostructures with ultimate control over their morphology.
Phase-Controlled Synthesis and Phase-Change Properties of Colloidal Cu-Ge-Te Nanoparticles

Dhananjeya Kumaar,Matthias Can,Helena Weigand,Olesya Yarema,Simon Wintersteller,Rachel Grange,Vanessa Wood,Maksym Yarema

DOI: https://doi.org/10.1021/acs.chemmater.4c01009

2024-06-24

Abstract:Phase-change memory (PCM) technology has recently attracted a vivid interest for neuromorphic applications, in-memory computing, and photonic integration due to the tunable refractive index and electrical conductivity between the amorphous and crystalline material states. Despite this, it is increasingly challenging to scale down the device dimensions of conventionally sputtered PCM memory arrays, restricting the implementation of PCM technology in mass applications such as consumer electronics. Here, we report the synthesis and structural study of sub-10 nm Cu-Ge-Te (CGT) nanoparticles as suitable candidates for low-cost and ultrasmall PCM devices. We show that our synthesis approach can accurately control the structure of the CGT colloids, such as composition-tuned CGT amorphous nanoparticles as well as crystalline CGT nanoparticles with trigonal α-GeTe and tetragonal Cu2GeTe3 phases. In situ characterization techniques such as high-temperature X-ray diffraction and X-ray absorption spectroscopy reveal that Cu doping in GeTe improves the thermal properties and amorphous phase stability of the nanoparticles, in addition to nanoscale effects, which enhance the nonvolatility characteristics of CGT nanoparticles even further. Moreover, we demonstrate the thin-film fabrication of CGT nanoparticles and characterize their optical properties with spectroscopic ellipsometry measurements. We reveal that CGT nanoparticle thin films exhibit a negative reflectivity change and have good reflectivity contrast in the near-IR spectrum. Our work promotes the possibility to use PCM in nanoparticle form for applications such as electro-optical switching devices, metalenses, reflectivity displays, and phase-change IR devices.
Self‐Assembled Pb Nanostructures on Si(111) Surfaces: from Nanowires to Nanorings

Rui Wu,Yi Zhang,Feng Pan,Li-Li Wang,Xu-Cun Ma,Jin-Feng Jia,Qi-Kun Xue

DOI: https://doi.org/10.1002/adma.200901063

IF: 29.4

2009-01-01

Advanced Materials

Abstract:A template-directed growth method for metals is described in which ordered arrays of super-long single-crystalline metal nanowires with atomic-level-controlled width, thickness (height), and surface location are prepared by molecular beam epitaxy. Their subsequent examination by in situ scanning tunneling microscopy is also outlined. A phase-separated stripe pattern composed of alternately a Ge-rich incommensurate phase and a root 3 x root 3 phase is first obtained by Ge deposition on Si(111) substrates. Further deposition of Pb on this patterned surface leads to a well-ordered array of super-long Pb nanowires. Using the same mechanism, superconducting Pb nanorings can also be fabricated. In this review of our recent work, these Pb single-crystalline nanowires and nanorings are shown to serve as an ideal platform for the study of superconductivity in reduced dimensionalities. Furthermore, because the widths and spatial distributions of two phases can be precisely controlled by the Ge coverage and substrate temperature, and because a metal will always selectively nucleate on one of two phases, this template-directed growth method can be applied to a wide range of metals.

[Eczema caused by contact allergy to drugs in nursing personnel].

Synthesis and characterization of phase-change nanowires.

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Phase Selection Enabled Formation of Abrupt Axial Heterojunctions in Branched Oxide Nanowires.

Self-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices

Phase-Change Nanowires for Non Volatile Memory

Control of Ge island coalescence for the formation of nanowires on silicon.

A nano-droplet hydrodynamic transformation of uniform amorphous bilayer into highly modulated Ge/Si island-chains.

Axially Segmented Semiconductor Heteronanowires

Surface-mediated Tunable Self-Assembly of Single Crystal Semimetallic ErSb/GaSb Nanocomposite Structures.

Epitaxy of Semiconductor-Superconductor nanowires

Phase Selection in Self-catalyzed GaAs Nanowires

Morphology Control of Indium Germanate Nanowires, Nanoribbons, and Hierarchical Nanostructures

Controlled Vapor-Liquid-Solid Growth of Long and Remarkably Thin Pb 1- x Sn x Te Nanowires with Strain-Tunable Ferroelectric Phase Transition

Catalyzed Growth for Atomic-Precision Colloidal Chalcogenide Nanowires and Heterostructures: Progress and Perspective.

Phosphorus-Controlled Nanoepitaxy in the Asymmetric Growth of GaAs-InP Core-Shell Bent Nanowires

Chemical Vapor Deposition Growth of Single-Walled Carbon Nanotubes with Controlled Structures for Nanodevice Applications.

Laser-Driven Growth of Semiconductor Nanowires from Colloidal Nanocrystals via the Young-Laplace Effect

3D Shape Reconstruction of Ge Nanowires during Vapor-Liquid-Solid Growth under Modulating Electric Field

Phase-Controlled Synthesis and Phase-Change Properties of Colloidal Cu-Ge-Te Nanoparticles

Self‐Assembled Pb Nanostructures on Si(111) Surfaces: from Nanowires to Nanorings