Abstract:Germanium telluride (GeTe), a phase-change material, is known to exhibit four different structural states: three at room-temperature (one amorphous and two crystalline, <math> α</math> and <math> γ</math>) and one at high temperature (crystalline, <math> β</math>). Because transitions between the amorphous and crystalline states lead to significant changes in material properties (e.g., refractive index and resistivity), GeTe has been investigated as a phase-change material for photonics, thermoelectrics, ferroelectrics, and spintronics. Consequently, the temperature-dependent phase transitions in GeTe have been studied for bulk and thin-film GeTe, both fabricated by sputtering. Colloidal synthesis of nanoparticles offers a more flexible fabrication approach for amorphous and crystalline GeTe. These nanoparticles are known to exhibit size-dependent properties, such as an increased crystallization temperature for the amorphous-to-<math> α</math> transition in sub-10 nm GeTe particles. The <math> α</math>-to-<math> β</math> phase transition is also expected to vary with size, but this effect has not yet been investigated for GeTe. Here, we report time-resolved x-ray diffraction of GeTe nanoparticles with different diameters and from different synthetic protocols. We observe a non-volatile amorphous-to-<math> α</math> transition between 210 <math> °</math>C and 240 <math> °</math>C and a volatile <math> α</math>-to-<math> β</math> transition between 370 <math> °</math>C and 420 <math> °</math>C. The latter transition was reversible and repeatable. While the transition temperatures are shifted relative to the values known for bulk GeTe, the nanoparticle-based samples still exhibit the same structural phases reported for sputtered GeTe. Thus, colloidal GeTe maintains the same general phase behavior as bulk GeTe while allowing for more flexible and accessible fabrication. Therefore, nanoparticle-based GeTe films show great potential for applications such as in active photonics.

Synthesis and characterization of phase-change nanowires.

Phase-Change Nanowires for Non Volatile Memory

Strain Induced Structural Phase Transition in TM6X6 (TM = Mo, W; X = S, Se, Te) Nanowires

Controlled Self-Assembly of Nanoscale Superstructures in Phase-Change Ge-Sb-Te Nanowires

Phase Change Behavior and Critical Size of Ge2Sb2Te5 Nanowires and Nanotubes

Direct observation of structural transitions in the phase change material Ge2Sb2Te5

Unravelling the amorphous structure and crystallization mechanism of GeTe phase change memory materials

Crystallization kinetics of nanoconfined GeTe slabs in GeTe/TiTe -like superlattices for phase change memories

Investigation of Ge2Sb2Te5/Si Nano-Multilayered Films for Phase-Change Memory Applications

Synthesis and Structure Characterization of Ternary Zn<sub>2</sub>GeO<sub>4</sub>Nanowires by Chemical Vapor Transport

Synthesis and characterization of phase change memory cells

Phase Transitions in Germanium Telluride Nanoparticle Phase-Change Materials Studied by Time-Resolved X-Ray Diffraction

Synthesis And Structure Characterization Of Ternary Zn2geo4 Nanowires By Chemical Vapor Transport

Phase transitions in germanium telluride nanoparticle phase-change materials studied by temperature-resolved x-ray diffraction

The characteristics of GeTe-Sb thin films with different Sb concentration for phase change memory

Competing covalent and ionic bonding in Ge-Sb-Te phase change materials

Synthesis and Characteristics of a Phase-Change Magnetic Material

Role of the Nano Amorphous Interface in the Crystallization of Sb2te3 Towards Non-Volatile Phase Change Memory: Insights from First Principles

A Nano-Scale-Sized 3d Element for Phase Change Memories

In situ characterization of vacancy ordering in Ge-Sb-Te phase-change memory alloys

Formation and Device Application of Ge Nanowire Heterostructures Via Rapid Thermal Annealing