Abstract:Fe doped phase change material Ge x Sb y Te z has shown experimentally the ability to alter its magnetic properties by phase change. This engineered spin degree of freedom into the phase change material offers the possibility of logic devices or spintronic devices where they may enable fast manipulation of ferromagnetism by a phase change mechanism. The electronic structures and spin configurations of isolated transition metal dopant in phase change material (iTM-PCM) is important to understand the interaction between localized metal d states and the unique delocalized host states of phase change material. Identifying an impurity center that has, in isolation, a nonvanishing magnetic moment is the first step to study the collective magnetic ordering, which originates from the interaction among close enough individual impurities. Theoretical description of iTM-PCM is challenging. In this work, we use a screened exchange hybrid functional to study the single 3d transition metal impurity in crystalline GeTe and GeSb 2 Te 4 . By curing the problem of local density functional (LDA) such as over-delocalization of the 3d states, we find that Fe on the Ge/Sb site has its majority d states fully occupied while its minority d states are empty, which is different from the previously predicted electronic configuration by LDA. From early transition metal Cr to heavier Ni, the majority 3d states are gradually populated until fully occupied and then the minority 3d states begin to be filled. Interpretive orbital interaction pictures are presented for understanding the local and total magnetic moments.

Synthesis and Characteristics of a Phase-Change Magnetic Material

Magnetic Properties and Phase Change Features in Fe-doped Ge-Sb-Te.

Origin of Ferromagnetism and the Design Principle in Phase-Change Magnetic Materials

Crystallinity and its influence on physical and magnetic properties in phase change magnetic materials

Competing covalent and ionic bonding in Ge-Sb-Te phase change materials

Direct observation of structural transitions in the phase change material Ge2Sb2Te5

Phase diagram, ferromagnetic martensitic transformation and magnetoresponsive properties of Fe-doped MnCoGe alloys

Control of ferromagnetic resonance by phase change in Si/GeSbTe/FeCoB heterostructures

Synthesis and characterization of phase-change nanowires.

Study of transition speed and electrical transportation properties of Ge1Sb2Te4 and Ge2Sb2Te5 chalcogenide phase-change materials

Understanding Phase-Change Behaviors of Carbon-Doped Ge2sb2te5 for Phase-Change Memory Application

Ultrafast Crystallization and Thermal Stability of In–Ge Doped Eutectic Sb70Te30 Phase Change Material

Switching to Hidden Metallic Crystal Phase in Phase-Change Materials by Photoenhanced Metavalent Bonding

Understanding CrGeTe3: an Abnormal Phase Change Material with Inverse Resistance and Density Contrast

High Thermoelectric and Reversible P-N-p Conduction Type Switching Integrated in Dimetal Chalcogenide.

Exploring the Magnetic Behavior of a Magnetic High-Entropy Alloy with Dual-Phase B20 Crystal Structure

The Phase Change Memory Features High-Temperature Characteristic Based on Ge-Sb-Se-Te Alloys

Electronic Structure and Spin Configuration Trends of Single Transition Metal Impurity in Phase Change Material

Crystallization and Thermal Stability of Sn-doped Ge2Sb2Te5phase Change Material

Unraveling the optical contrast in Sb2Te and AgInSbTe phase-change materials

Crystallization and thermal stability of Sn-doped Ge2Sb2Te5 phase change material