Preparation and Characterization of C54 TiSi2 Nanoislands on Si (1 1 1) by Laser Deposition of TiO2

Fengzhou Zhao,Xuefeng Cui,Bing Wang,J. G. Hou

DOI: https://doi.org/10.1016/j.apsusc.2006.05.054

IF: 6.7

2006-01-01

Applied Surface Science

Abstract:We present the preparation of C54 TiSi2 nanoislands on Si (111) with a method of the pulsed laser deposition of titanium oxide thin films. The TiO2 thin films with nominal thicknesses of 1nm on Si (111) were annealed at 850°C for about 4h in situ. The X-ray diffraction patterns and the X-ray photoelectron spectra indicate that the nanoislands are in C54 TiSi2 phase. The characterization using a scanning tunneling microscope shows that the nanoislands with triangular, polygonal and rod-like shapes on Si (111) exhibit the Volmer–Weber growth mode. The sizes of the polygonal islands distribute in two separated ranges. For the small islands, they have a narrow lateral size distribution centered at 4nm and a height range in 0.6–3.6nm, while for the large islands, their lateral sizes are in the range of 12–40nm and the heights in the range of 4–9nm. The sizes of the well-shaped triangular islands are intermediate with the lateral sizes in range of 5–20nm and the heights of 2–3.5nm. The rod-like islands are about 50–200nm in length, 5nm in height and about 15–20nm in width. The origination of the various shapes of the nanoislands is attributed to the symmetry of Si (111) substrate and the lattice mismatch between the C54 TiSi2 and the Si (111) surface.