Abstract:Mechanisms of defect formation near surface ledges of a diamond cubic crystal subjected to compressive strain parallel to the surface are investigated as precursory processes to dislocation nucleation in Si1-xGex/Si(100) heteroepitaxial thin films under surface diffusion conditions. This study is motivated by our preliminary calculations of dislocation formation at surface ledges in a model crystal characterized by the 6–12 Lennard-Jones interatomic potential, and by our controlled annealing experiments on evolution of a Si1-xGex/Si(100) film from an atomically flat, defect-free, surface morphology to an undulating surface morphology with cusp-like surface features and dislocation formation at the cusp valley. When subjecting such films to high temperature anneals, we observed nucleation and growth of three types of dislocations: the 60° glide dislocations, the 90° Lomer-Cottrell dislocations with stair rod Shockley partials and twinned wedge disclinations with twofold ∑9 coincidence boundaries between the wedge and matrix. The objective of this paper is to examine the sequence of atomistic processes which lead to the formation of each of these three types of defects, and in doing so we hope to foster a link between the continuum picture of dislocation nucleation in thin films and the quantum mechanical picture of the unstable collapse of surface ledges due to compressive strain. While we do not actually perform quantum mechanical calculations in this paper, attempts will be made to identify the critical problems that need to be addressed at the quantum mechanics level. Although the present study should be of general interest in the study of dislocation formation near crystal surface ledges, we will confine our discussion to the problem of dislocation formation during stress driven mass transport via surface diffusion in heteroepitaxial thin films which are morphologically unstable under cycloid-like variations in surface shape. The following process is envisioned as undulations form in the film surface. As the curvature at the root of a surface ‘valley’ increases, the local elastic strain magnitude rises as a result of the local geometrical magnification of stress. The strain continues to increase in magnitude as the root sharpens, until atomic ledges collapse to form dislocations. Due to the resulting stress relief, subsequent mass transport reverses its direction of flow and causes such dislocations to be trapped as bulk defects as the film surface moves away from the nucleation sites. Through this mechanism, dislocations can be nucleated without glide by surface trapping in films with even a modest level of nominal compressive mismatch strain.

Formation Of Surface Structures During Heteroepitaxial Thin Film Growth On Prepatterned Substrates

Study of Si and Ge growth on Si(100) surface

SURFACE ROUGHENING OF HETEROEPITAXIAL THIN FILMS

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Surface Roughening in Lattice Mismatched Heteroepitaxial Thin Films.

Dynamics of Self-Organized Epitaxial Island Formation under Controlled Annealing

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Epitaxial growth of Si thin films with hexagonal close-packed structures on metal substrates

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems

Mechanisms for directed self-assembly of heteroepitaxial Ge/Si quantum dots with deterministic placement and sub-23nm spacing on SiC nanotemplates

Growth Mechanisms in Thin Film Epitaxy of Si/Sige from Hydrides

Strain-Mediated Patterning of Surface Nanostructure by the Subsurface Island Array

Self-assembling formation of Si-QDs on SiO2 line patterns

Mechanical Nano-Patterning: Toward Highly-Aligned Ge Self-Assembly on Low Lattice Mismatched GaAs Substrate

Anisotropic Behaviour of Surface Roughening in Lattice Mismatched Heteroepitaxial Thin Films

Stress-driven Surface Evolution in Heteroepitaxial Thin Films: Anisotropy of the Two-Dimensional Roughening Mode

Spontaneous Formation of Vertically Anticorrelated Epitaxial Islands on Ultrathin Substrates

Atomistic models of dislocation formation at crystal surface ledges in Si<sub>1-x</sub>Ge<sub>x</sub>/Si(100) heteroepitaxial thin films

Effect of Stresses on Defect Nucleation in Si<sub>1−.x</sub>Ge<sub>x</sub>/Si Heteroepitaxial Systems

π-Conjugation in Epitaxial Si(111)-($\sqrt3$$\times$$\sqrt3$) Surface: an Unconventional "Bamboo Hat" Bonding Geometry for Si