Abstract:We develop rational chemical strategies to synthesize novel one-dimensional nanowire materials of transition metal silicides, investigate their physical properties, and use them as nanoscale building blocks for the bottom-up assembly of integrated photonic, electronic, and spintronic nanosystems. Transition metal silicides are extremely important to microelectronics because of the ohmic contact and interconnect many silicides (NiSi, CoSi2, and TiSi2) provide. Furthermore, many silicides are direct bandgap semiconductors (CrSi2, β-FeSi2) and are promising for silicon-based photonics. The recent discovery of FexCo1-xSi alloys as ferromagnetic semiconductors make them promising for spintronic applications as well. Herein, we describe the chemical synthesis of free standing single-crystal nanowires (NWs) of FeSi, the only transition metal Kondo insulator and isostructural CoSi, an important metallic silicide for CMOS electronics. Straight and smooth FeSi and CoSi nanowires are produced on silicon substrates covered with a thin layer of silicon oxide through the decomposition of the single source organometallic precursors trans-Fe(SiCl3)2(CO)4 and Co(SiCl3)(CO)4, respectively, in a simple chemical vapor deposition (CVD) process. Unlike typical vapor-liquid-solid (VLS) NW growth, silicide NWs form without the addition of metal catalysts, have no catalyst tips, and depend strongly on the surface employed. The physical properties of these new FeSi and CoSi nanowires, including electrical transport and X-ray spectroscopy, are reported. This general approach to silicide nanowire growth is likely to yield other functional silicide nanosystems with significant applications in nanoelectronics and nanophotonics, and for FexCo1-xSi, silicon based spintronics.

Self-assembling Iron Silicide Nanobars and Structure on Silicon Wafer by Microwave Plasma Method

Fabrication and Mechanism of Α-Fesi2 Nanobars on (001) Silicon Wafer

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Structure and Orientation Analysis of Iron Silicide Epitaxially Grown on Si Substrates

A Novel Sulfide-Assisted Growth of Silicon Nano-Wires

Array-orderly single crystalline silicon nano-wires

Hybrid Metal-Insulator-metal Structures on Si Nanowires Array for Surface Enhanced Raman Scattering

Surfactant-resisted assembly of Fe-containing nanoparticles for site-specific growth of SWNTs on Si surface.

Synthesis of Self-assembled Iron Silicon Oxide Nanowires onto Single-crystalline Si(100)

Crystalline Silicon Carbide Nanocones And Heterostructures Induced By Released Iron Nanoparticles

Formation of Silicon Carbon Nitride Crystals and Aligned Silicon Carbon Nitride Microrods by Microwave Plasma Chemical Vapor Deposition

Formation of Sic Nanostruture Using Hexamethyldisiloxane During Plasma-Assisted Hot-Filament Chemical Vapor Deposition

Metallic and Ionic Fe Induced Growth of Si−SiOx Core−Shell Nanowires

A Simple Approach to Controllably Grow Network-Like Branched Single-Crystalline Si3n4 Nanostructures

Aligned 1d Silicon Nanostructure Arrays by Plasma Etching

Self-organized growth of higher manganese silicide nanowires on Si(111), (110) and (001) surfaces

Chainlike Assembly of Magnetite Coated with SiO2 Nanostructures Induced by an Applied Magnetic Field

Preparation of Α-Si3n4 Nanorods Assembled Nanobelts by Crystallizing Amorphous Si3N4 Powders

Fabrication of One-Dimensional Iron Oxide/Silica Nanostructures with High Magnetic Sensitivity by Dipole-Directed Self-Assembly

Silicon Nanowires Grown on Iron-Patterned Silicon Substrates

Synthesis, Characterization, and Physical Properties of Transition Metal Silicide Nanowires