Abstract:Thin HfTiO gate dielectric is deposited by reactive co-sputtering method followed by wet or dry N2 anneal. The effects of Ti content on the performance of HfTiO gate dielectric are investigated by using different sputtering powers for the Ti target. Experimental results indicate that as the Ti content increases, the dielectric constant (κ) can increase up to 40 for a Ti content of 28%. However, when the Ti content is too high, the interface properties and gate leakage properties are deteriorated. On the contrary, results show that owing to the hydrolyzable property of GeOx, the wet-N2 anneal can greatly suppress the growth of unstable low-κ GeOx interlayer, resulting in lower interface-state density and gate leakage current, in addition to larger κ value. In this study, when the sputtering power of the Ti target is 80W together with a 25-W power for the Hf target and a post-deposition anneal (PDA) in wet-N2 ambient at 500°C for 300s, excellent device performance is achieved: equivalent oxide thickness of 0.72nm, equivalent dielectric constant of 39, interface-state density of 6.5×1011eV−1cm−2 and gate leakage current of 5.7×10−4A/cm2 at Vg=1V. Therefore, in order to obtain high-quality HfTiO gate dielectric for small-scaled Ge MOS devices, not only should the Ti content be optimized, the PDA should also be done in a wet-N2 ambient.

Effects of a Native Oxide Layer on the Conductive Atomic Force Microscopy Measurements of Self-Assembled Ge Quantum Dots

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Investigating the Composition and Conductance Distributions on Highly GeSi Mixed Quantum Dots and Inside Oxidation Problem

Nitrogen-Concentration Modulated Interface Quality, Band Alignment and Electrical Properties of Hftion/Ge Gate Stack Pretreated by Trimethylaluminum Precursor

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Studying the Lateral Composition in Ge Quantum Dots on Si(001) by Conductive Atomic Force Microscopy

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

CAFM Studies on Individual GeSi Quantum Dots and Quantum Rings

Conductive Atomic Force Microscopy Studies on the Transformation of Gesi Quantum Dots to Quantum Rings

Measurements of Confined Energy Levels and Coulomb Charging Effect in Self-Assembled Ge Quantum Dots by Admittance Spectroscopy

Increased Conductance of Individual Self-Assembled GeSi Quantum Dots by Inter-Dot Coupling Studied by Conductive Atomic Force Microscopy

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

Thermal Diffusion Effect of Self-Assembled Ge Quantum Dots Probed by Fluorescence X-ray Absorption Fine Structure

The Stability of Faceted SiGe Quantum Dots Capped with a Thin Si Layer

Composition and Conductance Distributions of Single GeSi Quantum Rings Studied by Conductive Atomic Force Microscopy Combined with Selective Chemical Etching

Local Structure of Ge Quantum Dots Self-Assembled on Si(100) Probed by X-Ray Absorption Fine-Structure Spectroscopy

Thermally Oxidized Formation Of New Ge Dots Over As-Grown Ge Dots In The Si Capping Layer

Characterization of a nanocrystal metal-oxide-semiconductor field effect transistor(MOSFET)

Bias-dependent Conductive Characteristics of Individual GeSi Quantum Dots Studied by Conductive Atomic Force Microscopy

Investigation of the Quantum Confinement Effects in Ge Dots by Electrical Measurements