Abstract:Monocrystalline Germanium quantum dots (Ge QDs), grown by molecular beam epitaxy (MBE), are intricately embedded within a SiO 2 oxide layer of a metal-insulator-semiconductor (MIS) structure, catering to optoelectronic applications. These monocrystalline Ge QDs exhibit high density (D ∼ 5 x 10 12 cm -2 ), possess a spherical morphology, and an average size of 6 nm with narrow size distribution. A comprehensive investigation into the influence of these quantum dots on the electrical transport and dielectric properties of the metal-insulator-semiconductor (MIS) structure was conducted through current-voltage (I-V) spectroscopy and impedance spectroscopy. Notably, I-V measurements demonstrate that Ge QDs enhance conduction phenomena, thereby improving electrical transport within the MIS structure. Furthermore, the capacitance-voltage (C-V) and conductance-voltage (G-V) measurements, spanning the inversion and accumulation regions, demonstrate a memory effect induced by Ge QDs within the MOS structure. Extensive analysis of dielectric parameters, including permittivity (ε'), dielectric loss (ε"), dissipation factor (tan δ ), as well as electrical modulus (M' and M"), across a broad frequency range and under varying bias voltages, reveals no anomalous electrical or dielectric behavior attributable to the presence of Ge QDs in MIS structure. Consequently, these findings affirm the viability of the novel MIS structures with Ge QDs for the development of optoelectronic devices such as photodetectors or solar cells.

Nanometer-scale dielectric constant of Ge quantum dots using apertureless near-field scanning optical microscopy

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Optical properties of Ge/Si quantum dot superlattices

Size-Dependent Optical Absorption of Silicon Nanocrystals Embedded in Sio2/Si3n4 Hybrid Matrix

Near-field effect in the infrared range through periodic Germanium subwavelength arrays.

Optical study of Ge quantum dots and infrared photodetectors

Investigation of the Quantum Confinement Effects in Ge Dots by Electrical Measurements

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Electrical and dielectric characterization of Ge quantum dots embedded in MIS structure (AuPd/SiO 2 :Ge QDs/n-Si) grown by MBE

Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence

Nanoscale Electrical Property Studies of Individual GeSi Quantum Rings by Conductive Scanning Probe Microscopy.

Quantum Levels in Ge Quantum Dots Studied by Photocurrent Spectroscopy and Admittance Spectroscopy

Effect of interdiffusion and quantum confinement on Raman spectra of the Ge/Si(100) heterostructures with quantum dots

Sensitively Site‐Dependent Enhancement of Emissions from Ge Quantum Dots in SiGe Microdisks

Structure and optical properties of the Ge and Sn quantum-dots

The Role of Interdiffusion and Spatial Confinement in the Formation of Resonant Raman Spectra of Ge/Si(100) Heterostructures with Quantum-Dot Arrays

CAFM Studies on Individual GeSi Quantum Dots and Quantum Rings

Quantitative Microwave Near-Field Microscopy of Dielectric Properties

Optical And Structural Investigation Of Stacked Ge Quantum Dots

Short-Range Order Structures of Self-Assembled Ge Quantum Dots Probed by Multiple-Scattering Extended X-Ray Absorption Fine Structure