Abstract:Exploring the phonon characteristics of novel group-IV binary XC (X = Si, Ge, Sn) carbides and their polymorphs has recently gained considerable scientific/technological interest as promising alternatives to Si for high-temperature, high-power, optoelectronic, gas-sensing, and photovoltaic applications. Historically, the effects of phonons on materials were considered to be a hindrance. However, modern research has confirmed that the coupling of phonons in solids initiates excitations, causing several impacts on their thermal, dielectric, and electronic properties. These studies have motivated many scientists to design low-dimensional heterostructures and investigate their lattice dynamical properties. Proper simulation/characterization of phonons in XC materials and ultrathin epilayers has been challenging. Achieving the high crystalline quality of heteroepitaxial multilayer films on different substrates with flat surfaces, intra-wafer, and wafer-to-wafer uniformity is not only inspiring but crucial for their use as functional components to boost the performance of different nano-optoelectronic devices. Despite many efforts in growing strained zinc-blende (zb) GeC/Si (001) epifilms, no IR measurements exist to monitor the effects of surface roughness on spectral interference fringes. Here, we emphasize the importance of infrared reflectivity Rω and transmission Tω spectroscopy at near normal θi = 0 and oblique θi ≠ 0 incidence (Berreman effect) for comprehending the phonon characteristics of both undoped and doped GeC/Si (001) epilayers. Methodical simulations of Rω and Tω revealing atypical fringe contrasts in ultrathin GeC/Si are linked to the conducting transition layer and/or surface roughness. This research provided strong perspectives that the Berreman effect can complement Raman scattering spectroscopy for allowing the identification of longitudinal optical ωLO phonons, transverse optical ωTO phonons, and LO-phonon-plasmon coupled ωLPP+ modes, respectively.

Near-field effect in the infrared range through periodic Germanium subwavelength arrays.

Vertical field enhanced nanostructure for quantum well infrared photodetector through Germanium subwavelength arrays

Enhanced and Suppressed Infrared Transmission Through Germanium Subwavelength Arrays

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

Broadband Mid-Ir Antireflective Reuleaux-triangle-shaped Hole Array on Germanium

Tailored absorption/emission and ultrastrong coupling from heavily doped germanium plasmonic antennas

Highly Enhanced Broadband Infrared Absorption of Germanium by Multi-Layer Plasmonic Nano-Antenna

Research Progress of Technologies for Germanium Near-Infrared Photodetectors

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Near-infrared photoluminescence in germanium oxide enclosed germanium nano- and micro-crystals.

Submonolayer quantum dot quantum cascade long-wave infrared photodetector grown on Ge substrate

Infrared Tubular Microcavity Based on Rolled-Up GeSn/Ge Nanomembranes.

Simulations of Infrared Reflectivity and Transmission Phonon Spectra for Undoped and Doped GeC/Si (001)

Nanostructured germanium with >99 % absorption at 300-1600 nm wavelengths

Directional Radiation and Photothermal Effect Enhanced Control of 2D Excitonic Emission Based on Germanium Nanoparticles.

Mid-Infrared Detectors and Imagers Integrating All-Group IV Nanowires

Diffraction Coupling of a Very Long Wavelength Quantum Well Infrared Photodetector Linear Array

Well-aligned Periodic Germanium Nanoisland Arrays with Large Areas and Improved Field Emission Performance Induced by Femtosecond Laser

Absorption and quantum efficiency of GeSn nanopillar arrays for infrared detectors

High Spatial Frequency Laser Induced Periodic Surface Structure Formation in Germanium by Mid-Ir Femtosecond Pulses