Abstract:In a field-effect transistor (FET), six single electron-tunneling events and the corresponding electron storage in silicon nanocrystals were observed at room temperature. The device is a metal-oxide-semiconductor field-effect transistor (MOSFET) with an electron channel 5 mu m in length, 10 IJ mu m in width, and an array of silicon-oxide passivated silicon nanocrystals as the multiple-nanocrystal floating gate. The layer of silicon nanocrystals with an average size of 5 nm is prepared by plasma enhanced chemical vapor deposition (PECVD) method using high-hydrogen diluted silane and followed by thermal treatment. Because of the ultra-small electric capacitance (about 4.6 x 10(-2) aF) between the control gate and a single nanocrystal, the tunneling of electrons from the channel to the nanocrystals is regulated by the Coulomb-blockade effect. The addition of one more electron per nanocrystal leads to the oscillation of the drain-source current with a period of 3.8 V and causes a shift of 1.3 V in the threshold voltage. The duration of the electron storage in the nanocrystal is longer than 20 min. (C) 1999 Elsevier Science Ltd. All rights reserved.

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO2

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO<sub>2</sub>

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO 2 Barriers

Charging and Coulomb Blockade Effects in Nanocrystalline Si Dots Embedded in SiO/sub 2/ Matrix

Observation of Coulomb Blockade Effect in Silicon Nanocrystallites at Room Temperature

Room Temperature Electron Tunneling and Storage in a Nanocrystalline Silicon Floating Gate Structure

Size-Dependent Resonant Tunneling and Storing of Electrons in A Nanocrystalline Silicon Floating-Gate Double-Barrier Structure

Capacitance–voltage Study of SiO2/nanocrystalline Silicon/sio2 Double-Barrier Structures

RESONANT TUNNELING AND COULOMB BLOCKADE IN A NANOCRYSTALLINE Si DOUBLE-BARRIER FLOATING-GATE STRUCTURE

Electron and hole charging effect of nanocrystalline silicon in double-oxide barrier structure

Charging and Coulomb Blockade Effects of the Nc-Si Embedded in SiNx Double-Barrier Structures

Structural characterization and Coulomb blockade of a-SiN x / nanocrystalline Si /a-SiN x asymmetric double-barrier structures

Coulomb Blockade Effect of Carriers in nc-Si Embedded in Ultrathin SiO2 Films

Electron Tunneling in Nc-Si/A-Sio2 Double-Barrier Diode

Observation of Ionic Coulomb Blockade in Nanopores.

Resonant Tunnelling and Storage of Electrons in Si Nanocrystals Within A-Sin X /Nc-Si/a-sin X Structures

Electron Trapping, Storing, and Emission in Nanocrystalline Si Dots by Capacitance–voltage and Conductance–voltage Measurements

Can Single Electron Effects Be Directly Observed in Si Quantum Dots Array at Room Temperature?

Observation of Coulomb-blockade in a field-effect transistor with silicon nanocrystal floating gate at room temperature

Electron localization and resonant tunneling in uniform nanocrystalline silicon quantum dot systems

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots