Abstract:In this paper, we report direct experimental evidence of collective single electron effects in a single layer Si quantum dot sSi-QDd array at room temperature. The unique peak structure, observed in both the I-V and the capacitance-voltage sC-Vd characteristics, differs remarkably from the peaks and the staircase structures reported for the case of an individual quantum dot and reveals the collective Coulomb blockade and the quantum confinement effects in the weakly coupled Si-QD array. Simple theoretical estimations have been made to interpret the origin of the unique peak structure. Moreover, the number of charged electrons for each peak calculated from the underlying area of the peaks both in the I-V safter subtracting the background currentd and the C-V characteristics is found to be consistent with the number of coupled quantum dots under the electrode. This good agreement supports the assumption that each peak in the characteristics corresponds to a collective charging process of single electron into a subband in the Si-QD array arising from the weakly interdot coupling. This collective single electron effect in Si-QD array is important for its future application in the nanoelectronic devices.

Coulomb blockade induced negative differential resistance effect in a self-assembly Si quantum dots array at room temperature

Room Temperature Resonant Tunneling and Negative Differential Resistance Effects in a Self-Assembed Si Quantum Dot Array

Collective Behavior of Single Electron Effects in a Single Layer Si Quantum Dot Array at Room Temperature

Can Single Electron Effects Be Directly Observed in Si Quantum Dots Array at Room Temperature?

Multipeak negative differential resistance effects in nanocrystalline Si stacking MOS structures

Room-Temperature Multi-Peak Ndr in Nc-Si Quantum-Dot Stacking Mos Structures for Multiple Value Memory and Logic

Charging and Coulomb Blockade Effects in Nanocrystalline Si Dots Embedded in SiO/sub 2/ Matrix

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO 2 Barriers

Observation of Coulomb Blockade Effect in Silicon Nanocrystallites at Room Temperature

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO2

Room Temperature Resonant Tunneling and Coulomb Blockade in Nanocrystalline Si with Double SiO<sub>2</sub>

Aggregation-induced negative differential resistance in graphene oxide quantum dots.

Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure

RESONANT TUNNELING AND COULOMB BLOCKADE IN A NANOCRYSTALLINE Si DOUBLE-BARRIER FLOATING-GATE STRUCTURE

Coupling Induced Subband Structures And Collective Single Electron Behavior In A Single Layer Si Quantum Dot Array

The Effect of Surface Conductance on Lateral Gated Quantum Devices in Si/Sige Heterostructures

Structural characterization and Coulomb blockade of a-SiN x / nanocrystalline Si /a-SiN x asymmetric double-barrier structures

Coulomb Blockade Effect of Carriers in nc-Si Embedded in Ultrathin SiO2 Films

Charging and Coulomb Blockade Effects of the Nc-Si Embedded in SiNx Double-Barrier Structures

Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor

Size-Dependent Resonant Tunneling and Storing of Electrons in A Nanocrystalline Silicon Floating-Gate Double-Barrier Structure