Abstract:Scalability and performance of current flash memories can be improved substantially by replacing the floating poly-Si gate by a layer of Si dots. This multi-dot layer can be fabricated CMOS-compatibly in very thin gate oxide by ion beam synthesis (IBS). Here, we present both experimental and theoretical studies on IBS of multi-dot layers consisting of Si nanocrystals (NCs). The NCs are produced by ultra low energy Si ion implantation, which causes a high Si supersaturation in the shallow implantation region. During post-implantation annealing, this supersaturation leads to phase separation of the excess Si from the SiO2. Till now, the study of this phase separation process suffered from the weak Z contrast between Si and SiO2 in Transmission Electron Microscopy (TEM). Here, this imaging problem is resolved by mapping Si plasmon losses with a Scanning Transmission Electron Microscopy equipped with a parallel Electron Energy Loss Spectroscopy system (PEELS-STEM). Additionally, kinetic lattice Monte Carlo simulations of Si phase separation have been performed and compared with the experimental Si plasmon maps. It has been predicted theoretically that the morphology of the multi-dot Si floating-gate changes with increasing ion fluence from isolated, spherical NCs to percolated spinodal Si pattern. These patterns agree remarkably with PEELS-STEM images. However, the predicted fluence for spinodal patterns is lower than the experimental one. Because oxidants of the ambient atmosphere penetrate into the as-implanted SiO2, a substantial fraction of the implanted Si might be lost due to oxidation.

Room-Temperature Multi-Peak Ndr in Nc-Si Quantum-Dot Stacking Mos Structures for Multiple Value Memory and Logic

Multipeak negative differential resistance effects in nanocrystalline Si stacking MOS structures

Room Temperature Resonant Tunneling and Negative Differential Resistance Effects in a Self-Assembed Si Quantum Dot Array

Coulomb blockade induced negative differential resistance effect in a self-assembly Si quantum dots array at room temperature

The Role of Nitridation of Nc-Si Dots for Improving Performance of Nc-Si Nonvolatile Memory

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application

Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure

The Effect of Multiple Interface States and Nc-Si Dots in a Nc-Si Floating Gate MOS Structure Measured by Their G — V Characteristics

Superior Endurance Performance Of Nonvolatile Memory Devices Based On Discrete Storage In Surface-Nitrided Si Nanocrystals

The Periodicity Effect on the Charge Storage Characteristic of Multistacked Nc-Si Floating Gate.

RESONANT TUNNELING AND COULOMB BLOCKADE IN A NANOCRYSTALLINE Si DOUBLE-BARRIER FLOATING-GATE STRUCTURE

C-V and G-V Measurements Showing Single Electron Trapping in Nanocrystalline Silicon Dot Embedded in MOS Memory Structure

Room Temperature Electron Tunneling and Storage in a Nanocrystalline Silicon Floating Gate Structure

Ge Quantum Dot Memory Realized with Vertical Si/SiGe Resonant Tunneling Structure

The Development of Nanometer Solid State Storage Memory

Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures

Modeling and Simulation for the Enhancement of Electron Storage in A Stacked Multilayer Nanocrystallite Silicon Floating Gate Memory

Charge Retention Enhancement in Stack Nanocrystalline-Si Based Metal-Insulator-semiconductor Memory Structure

Observation of Quantum Confinement Effects in Nanocrystalline Silicon Dot Floating Gate Single Electron Memory Devices

Aggregation-induced negative differential resistance in graphene oxide quantum dots.

Multi-Dot Floating-Gates for Nonvolatile Semiconductor Memories - Their Ion Beam Synthesis and Morphology