Abstract:Phonons, the quanta of lattice vibrations, are primary heat carriers for semiconductors and dielectrics. The demand of effective phonon manipulation urgently emerges, because the thermal management is crucial for the ongoing development of micro/nano semiconductor devices towards higher integration and power densities1, 2. Phonons also show wave-particle duality, while they are commonly treated as particle flows in current semiconductor structures3, 4. However, it sees constraints when the structure size reduces to nano and atomic scales, where the wave behavior of phonons begins to dominate, and studies of these phonon behaviors and their manipulations become long-standing challenges in experiments5. Here we show the experimental realization of coherent phonon transport, a wave-based thermal conduction fashion, in semiconductor structures. We report the successful observation of robust phonon coherence and tunneling effect in InAs/AlAs superlattices over an extensive temperature range up to 500 K, a breakthrough towards practical-application temperature for semiconductors compared with cryogenic conditions6. Our results demonstrate that the phonon coherence is robust even at a record-high interface density due to the dominating long-wavelength phonons, and the first-principles calculations clearly reveal their wave-particle duality. This revelation heralds a promising pathway towards efficient thermal phonon engineering at extreme scales, holding implications for a broad spectrum of semiconductor device applications, including microelectronics, optoelectronics, and thermoelectrics.

Effect of phonon-assisted tunneling on the subthreshold swing of tunnel field-effect transistor

Influence of Carrier-Carrier Interactions on the Sub-threshold Swing of Band-to-Band Tunnelling Transistors

Trap assisted tunneling and its effect on subthreshold swing of tunnel field effect transistors

Atomically Thin Van Der Waals Tunnel Field-Effect Transistors and Its Potential for Applications

Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

Theoretical Study of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in P-Type Ultrathin Body-FinFET by Multiphysics Simulation

Theoretical Study of Phosphorene Tunneling Field Effect Transistors

First-Principles Electron Transport with Phonon Coupling: Large-Scale at Low Cost

High performance tunnel field-effect transistor by gate and source engineering.

A Symmetric Tunnel Field-Effect Transistor Based on MoS2/Black Phosphorus/MoS2 Nanolayered Heterostructures

Thermalization Effect in semiconductor Si, and metallic silicide NiSi2, CoSi2 by using Non-Adiabatic Molecular Dynamics Approach

Modulating Tunneling Width and Energy Window for High-on-current Two-Dimensional Tunnel Field-Effect Transistors

High-temperature Phonon Coherence and Tunneling Effect in Semiconductor Superlattices

Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials

Effects of Electron-Phonon Interaction on Quantum Transport Through Single Molecule Transistor

Performance comparison between p-i-n tunneling transistors and conventional MOSFETs

The Influence of Tunneling Effect and Inversion Layer Quantization Effect on Threshold Voltage of Deep Submicron Mosfets

Feasibility of Phonon-Assisted Electronic Devices

Investigation of thermal stress effects on subthreshold conduction in nanoscale p-FinFET from Multiphysics perspective

On the possibility of obtaining MOSFET-like performance and sub-60 mV/decade swing in 1D broken-gap tunnel transistors

Dissipative transport and phonon scattering suppression via valley engineering in single-layer antimonene and arsenene field-effect transistors