Abstract:In this work, device performances of tunneling field effect transistors (TFETs) based on phosphorene are explored via self-consistent atomistic quantum transport simulations. Phosphorene is an ultra-thin two-dimensional (2-D) material with a direct band gap suitable for TFETs applications. Our simulation shows that phosphorene TFETs exhibit subthreshold slope (SS) below 60 mV/dec and a wide range of on-current depending on the transport direction due to highly anisotropic band structures of phosphorene. By benchmarking with monolayer MoTe2 TFETs, we predict that phosphorene TFETs oriented in the small effective mass direction can yield much larger on-current at the same on-current/off-current ratio than monolayer MoTe2 TFETs. It is also observed that a gate underlap structure is required for scaling down phosphorene TFETs in the small effective mass direction to suppress the source-to-drain direct tunneling leakage current.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **How to evaluate the performance potential of phosphorene tunneling field - effect transistors (TFETs) in ultra - low - power devices through theoretical research, and compare them with monolayer molybdenum ditelluride (MoTe₂) TFETs**. Specifically, the paper focuses on the following aspects: 1. **Characteristics of phosphorene materials and their influence on TFET performance**: - Phosphorene is a two - dimensional material with a direct bandgap, which is suitable for TFETs. - Due to the highly anisotropic band structure of phosphorene, its transport properties show significant differences in different directions. 2. **Achieving a steep sub - threshold slope (SS) and a high on - off current ratio (Ion/Ioff)**: - Through self - consistent atomic - scale quantum transport simulations, the paper shows that phosphorene TFETs can achieve a sub - threshold slope lower than 60 mV/dec. - In the small effective mass direction (x - direction), phosphorene TFETs exhibit a higher on - current (Ion), while in the large effective mass direction (y - direction), the current is significantly reduced. 3. **Performance comparison with monolayer MoTe₂ TFETs**: - The paper benchmarks phosphorene TFETs against monolayer MoTe₂ TFETs, and the results show that at the same on - current/off - current ratio, the on - current of phosphorene TFETs in the small effective mass direction is three orders of magnitude higher than that of monolayer MoTe₂ TFETs. 4. **Size - scaling behavior and optimized design of phosphorene TFETs**: - As the gate length (LG) decreases, the source - drain direct tunneling leakage current increases sharply, limiting the device's scaling ability. - To suppress the leakage current and improve the Ion/Ioff ratio, a gate underlap structure is introduced. In summary, this paper aims to demonstrate the potential advantages of phosphorene TFETs in ultra - low - power applications through detailed theoretical simulations and performance evaluations, and proposes an optimized design to address the challenges brought by size - scaling.

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