Abstract:Few-layer black phosphorus is a semiconductor material which was discovered in 2014. Phosphorus has both high mobility (1100-1140 cm2/V.s in armchair direction) and finite bandgap (~0.35 eV for bulk) compared to the other two-dimensional materials such as MoS2 and graphene. A single layer of black phosphorus is named as phosphorene. Multilayer (ML) phosphorene has an adjustable direct bandgap that can be controlled either by changing the width of the ribbon or the number of layers. In this work, first we calculate the band structure of ML phosphorene nanoribbons (PNRs) using the tight-binding method. Then, we analyzed the performance characteristics of SL- and ML-PNR field effect transistors (PNRFETs) with abrupt doping between the Source/Drain (S/D) region and the channel region by employing the non-equilibrium Green’s function (NEGF) formalism in real space. This type of FET with abrupt doping near S/D and channel regions is known as conventional FET. We found that the bandgap of armchair PNRs with 16 atoms across the width of PNR for single-layer (SL) and bilayer (BL) structures is 1.899 and 1.224 eV, respectively. We showed that increasing the number of layers reduces both the bandgap of the material and the turn on voltage of device, however, it increases the ON-current of device. Simultaneously, the off-current also increases due to a higher probability of tunneling in low bandgap devices. In addition, increasing the number of atoms across the width of PNR leads to an increase in the Ids due to the decrease of the bandgap. Moreover, both on- and off-currents increase by decreasing the channel length in multilayer PNRFETs. Next, we compared the performance characteristics of conventional and junction-less (JL) PNRFETs. Recently, JL-FET with high doping concentration in S/D and channel regions was proposed to replace the conventional FET. The JL silicon-on insulator FETs fabricated by Tyndall group show outstanding output characteristics with low Drain Induced Barrier Lowering (DIBL), ideal subthreshold swing, etc. There is no p-n junction between S/D and channel regions in a JL transistor. Instead, all regions are highly doped with the same amount of dopant to increase the conductivity of the channel material. In this case, the barrier in front of the electrons coming from source, is formed by applying suitable gate voltage. From experimental point of view, it should be much easier to dope all S/D and channel materials with the same doping concentration compared to the conventional FETs which needs abrupt doping. Thus, it should be a point of interest to have a performance comparison between conventional and JL phosphorene FETs. We investigated the performance of phosphorene FETs in terms of Id-Vgs, Id-Vds characteristics, energy levels, subthreshold swing, DIBL, and ION/IOFF.

Theoretical Study of Phosphorene Tunneling Field Effect Transistors

Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene

Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors

Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors

High-performance sub-10-nm monolayer black phosphorene tunneling transistors

A Symmetric Tunnel Field-Effect Transistor Based on MoS2/Black Phosphorus/MoS2 Nanolayered Heterostructures

Simulation and Analysis of Phosphorene Nanoribbon Field Effect Transistors Using Non-Equilibrium Green's Function Formalism

The Study of Ambipolar Behavior in Phosphorene Field-Effect Transistors

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Modulating Tunneling Width and Energy Window for High-on-current Two-Dimensional Tunnel Field-Effect Transistors

Atomistic Quantum Transport Simulation of Multilayer Phosphorene Nanoribbon Field Effect Transistors

Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials

The Phosphorene Under The External Electronic Field And Strain

Sub-5 Nm Monolayer Black Phosphorene Tunneling Transistors.

Performance of Monolayer Blue Phosphorene Double-Gate MOSFETs from the First Principles.

Impact of Edge States on Device Performance of Phosphorene Heterojunction Tunneling Field Effect Transistors

Phosphorene: A New 2D Material with High Carrier Mobility

A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect

Modeling of Anisotropic Two-Dimensional Materials Monolayer HfS2 and Phosphorene MOSFETs

High-performance sub-10 nm monolayer black arsenic phosphorus tunneling transistors

Transport Properties of 5-nm Tunnel Field-Effect Transistor for High-Performance Switches Decorated With Blue Phosphorene and Transition Metals