Abstract:Enhancing the band-to-band tunneling (BTBT) is the most effective method to improve the performance of the tunnel field effect transistors (TFETs). In this article, the transport properties of monolayer blue phosphorene (BP) and transition metals Ag or Mn decorated BP 5-nm TFETs along the armchair edge (AE) or zigzag edge (ZE) transport directions were studied by using density functional theory and non-equilibrium Green’s function formalism. The transfer charges between metal atoms and BP will induce the new energy bands to modulate the band structure of BP effectively. The ON-state currents of monolayer BP TFET are just 113 and $77~\mu \text{A}/\mu \text{m}$ along the AE or ZE transport directions. The adsorption Mn atom can induce band gap states, and ON-state currents of Mn-decorated TFET along the AE or ZE transport directions can be improved to 616 and $646~\mu \text{A}/\mu \text{m}$ , respectively. Although the band gap states induced by adsorbed Ag atom are less than those induced by adsorbed Mn atom, ON-state currents of Ag-decorated TFET along the AE or ZE transport directions could reach to 972 and $1308~\mu \text{A}/\mu \text{m}$ , which both meet the requirement of high performance (HP) logic applications for the next decade in the International Technology Roadmap for Semiconductors (ITRS). In addition, ON-state currents of Ag-decorated TFET including phonon-assisted tunneling along the AE and the ZE transport directions further increase to 1003 and $1823~\mu \text{A}/\mu \text{m}$ , and better meet the HP requirements in ITRS.

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Sub-5 Nm Monolayer Black Phosphorene Tunneling Transistors.

High-performance sub-10 nm monolayer black arsenic phosphorus tunneling transistors

Sub-10 Nm Vertical Tunneling Transistors Based on Layered Black Phosphorene Homojunction

Can A Black Phosphorus Schottky Barrier Transistor Be Good Enough?

Device Performance Simulations of Multilayer Black Phosphorus Tunneling Transistors

Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors

Black Phosphorus Radio-Frequency Transistors

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Theoretical Study of Phosphorene Tunneling Field Effect Transistors

Atomistic simulations of hetero-junction tunneling field-effect transistors with layered black phosphorus

A Symmetric Tunnel Field-Effect Transistor Based on MoS2/Black Phosphorus/MoS2 Nanolayered Heterostructures

Transport Properties of 5-nm Tunnel Field-Effect Transistor for High-Performance Switches Decorated With Blue Phosphorene and Transition Metals

Sub-10 Nm Two-Dimensional Transistors: Theory and Experiment

Impact of Edge States on Device Performance of Phosphorene Heterojunction Tunneling Field Effect Transistors

Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors

Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering

Performance Upper Limit of sub-10 nm Monolayer MoS2 Transistors

The in-plane graphene and boropheneβ12 contacted sub-10 nm monolayer black phosphorous Schottky barrier field-effect transistors

Modulating Tunneling Width and Energy Window for High-on-current Two-Dimensional Tunnel Field-Effect Transistors

Negative Capacitance Transistors with Monolayer Black Phosphorus