Second harmonic generation induced by gate voltage oscillation in few layer MnBi 2 Te 4
Liangcai Xu,Zichen Lian,Yongchao Wang,Xinlei Hao,Shuai Yang,Yongqian Wang,Chang Liu,Yang Feng,Yayu Wang,Jinsong Zhang
DOI: https://doi.org/10.1038/s41535-024-00694-8
IF: 6.856
2024-10-16
npj Quantum Materials
Abstract:Nonlinear charge transport, such as nonreciprocal longitudinal resistance and nonlinear Hall effect, has attracted considerable interest in probing the symmetries and topological properties of new materials. Recent research has revealed significant nonreciprocal longitudinal resistance and nonlinear Hall effect in MnBi 2 Te 4 , an intrinsic magnetic topological insulator, induced by the quantum metric dipole. However, the inconsistent response with charge density and conflicting C 3z symmetry requirement necessitate a thorough understanding of factors affecting the nonlinear transport measurement. This study uncovers an experimental factor leading to significant nonlinear transport signals in MnBi 2 Te 4 , attributed to gate voltage oscillation from the application of large alternating current. Additionally, a methodology is proposed to suppress this effect by individually grounding the voltage electrodes during second-harmonic measurements. The investigation underscores the critical importance of assessing gate voltage oscillation's impact before determining the intrinsic nature of nonlinear transport in 2D material devices with an electrically connected operative gate electrode.
materials science, multidisciplinary,physics, applied, condensed matter,quantum science & technology