Abstract:The study of quantum geometry effects in materials has been one of the most important research directions in recent decades. The quantum geometry of a material is characterized by the quantum geometry tensor of the Bloch states. The imaginary part of the quantum geometry tensor gives rise to the Berry curvature while the real part gives rise to the quantum metric. While Berry curvature has been well studied in the past decades, the experimental investigation on the quantum metric effects is only at its infancy stage. In this work, we measure the nonlinear transport of bulk MnBi${_2}$Te${_4}$, which is a topological anti-ferromagnet. We found that the second order nonlinear responses are negligible as required by inversion symmetry, the third-order nonlinear responses are finite. The measured third-harmonic longitudinal ($V_{xx}^{3{\omega}}$) and transverse ($V_{xy}^{3{\omega}}$) voltages with frequency 3w, driven by an a.c. current with frequency w, show an intimate connection with magnetic transitions of MnBi${_2}$Te${_4}$ flakes. Their magnitudes change abruptly as MnBi${_2}$Te${_4}$ flakes go through magnetic transitions from an AFM state to a canted AFM state and to a FM state. In addition, the measured $V_{xx}^{3{\omega}}$ is an even function of the applied magnetic field B while $V_{xy}^{3{\omega}}$ is odd in B. Amazingly, the field dependence of the third-order responses as a function of the magnetic field suggests that $V_{xx}^{3{\omega}}$ is induced by quantum metric quadrupole and $V_{xy}^{3{\omega}}$ is induced by Berry curvature quadrupole. Therefore, the quadrupoles of both the real and the imaginary part of the quantum geometry tensor of bulk MnBi${_2}$Te${_4}$ are revealed through the third order nonlinear transport measurements. This work greatly advanced our understanding on the connections between the higher order moments of quantum geometry and nonlinear transport.

Second harmonic generation induced by gate voltage oscillation in few layer MnBi 2 Te 4

Second harmonic generation induced by gate voltage oscillation in few layer MnBi2Te4

Unconventional anomalous Hall effect in magnetic topological insulator MnBi 4 Te 7 device

Unconventional Anomalous Hall Effect in Magnetic Topological Insulator MnBi4Te7 Device

Third order nonlinear transport properties in topological chiral antiferromagnetic semimetal CoNb3S6

Quantum geometry quadrupole-induced third-order nonlinear transport in antiferromagnetic topological insulator MnBi2Te4

Geometrical Nonlinear Hall Effect Induced by Lorentz Force

Controlled large non-reciprocal charge transport in an intrinsic magnetic topological insulator MnBi2Te4

Experimental Observation of the Gate-Controlled Reversal of the Anomalous Hall Effect in the Intrinsic Magnetic Topological Insulator MnBi2Te4 Device

Nonlinear Hall effect and scaling law in Sb-doped topological insulator MnBi4Te7

Gate-tunable Intrinsic Anomalous Hall Effect in Epitaxial MnBi2Te4 Films

Magnetic-field-induced robust zero Hall plateau state in MnBi2Te4 Chern insulator

Transport Properties of Sb2te3/Bi2te3 Topological Insulator Heterostructures

Superconducting Proximity in Intrinsic Magnetic Topological Insulator MnBi2Te4-NbN Hybrid Device Modulated by Coulomb Blockade Effect.

Nonreciprocal Transport in a Bilayer of MnBi 2 Te 4 and Pt

Gate-tunable Intrinsic Anomalous Hall Effect in Epitaxial MnBi 2 Te 4 Films

Topological surface state dominated nonlinear transverse response and microwave rectification at room temperature

Gate-tunable magnetoresistance in six-septuple-layer MnBi<sub>2</sub>Te<sub>4</sub>

Possible Bipolar Effect Inducing Anomalous Transport Behavior in the Magnetic Topological Insulator Mn( Bi1−xSbx)2

Third-order nonlinear Hall effect induced by the Berry-connection polarizability tensor