Abstract:We report c-axis transport studies on magnetic topological insulators Mn(Bi1-xSbx)2Te4. We performed systematic c-axis magnetoresistivity measurements under high magnetic fields (up to 35 T) on several representative samples. We find the lightly hole- and lightly electron-doped samples, while both having the same order of magnitude of carrier density and similar spin-flop transitions, exhibit sharp contrast in electronic anisotropy and transport mechanism. The electronic anisotropy is remarkably enhanced for the lightly hole-doped sample relative to pristine MnBi2Te4 but not for the lightly electron-doped sample. The lightly electron-doped sample displays a giant negative longitudinal magnetoresistivity (LMR) induced by the spin-valve effect at the spin-flop transition field, whereas the lightly hole-doped sample exhibits remarkable negative LMR consistent with the chiral anomaly behavior of a Weyl semimetal. Furthermore, we find the large negative LMR of the lightly hole-doped sample extends to a wide temperature range above the Néel temperature (T_N) where the magnetoconductivity is proportional to B^2. This fact, together with the short-range intralayer ferromagnetic correlation revealed in isothermal magnetization measurements, suggests the possible presence of the Weyl state above T_N. These results demonstrate that in the c-axis magnetotransport of Mn(Bi1-xSbx)2Te4, the spin scattering is dominant in the lightly electron-doped sample but overwhelmed by the chiral anomaly effect in the lightly hole-doped sample due to the presence of the Weyl state. These findings extend the understanding of the transport properties of Mn(Bi1-xSbx)2Te4.

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Universal gapless Dirac cone and tunable topological states in (MnBi$_2$Te$_4$)$_m$(Bi$_2$Te$_3$)$_n$ heterostructures

Magnetization-tuned topological quantum phase transition in MnBi2Te4 devices

Magnetization-tuned topological quantum phase transition in MnBi<sub>2</sub>Te<sub>4</sub> devices

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Gate-tunable magnetoresistance in six-septuple-layer MnBi<sub>2</sub>Te<sub>4</sub>

Magnetically Controllable Topological Quantum Phase Transitions in the Antiferromagnetic Topological Insulator MnBi2Te4

Giant spin-valve effect and chiral anomaly in antiferromagnetic topological insulators Mn(Bi1-xSbx)2Te4

Magnetic-field-induced quantized anomalous Hall effect in intrinsic magnetic topological insulator MnBi$_2$Te$_4$

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Antiferromagnetic Quantum Anomalous Hall Effect Modulated by Spin Flips and Flops

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Magnetic-field-induced Quantized Anomalous Hall Effect in Intrinsic Magnetic Topological Insulator MnBi_2Te_4

Magnetically Controllable Topological Quantum Phase Transitions in Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$

Nonreciprocal Transport in a Bilayer of MnBi 2 Te 4 and Pt

Possible Bipolar Effect Inducing Anomalous Transport Behavior in the Magnetic Topological Insulator Mn( Bi1−xSbx)2

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