Abstract:Two-dimensional (2D) crystals, such as graphene, hexagonal boron nitride and transitional metal dichalcogenides, have attracted tremendous amount of attention over the past decade due to their extraordinary thermal, electrical and optical properties, making them promising nano-materials for the next-generation electronic systems. A large number of heterostructures have been fabricated by stacking of various 2D materials to achieve different functionalities. In this work, we simulate the electron transport properties of a three-terminal multilayer heterostructure made from graphene nanoribbons vertically sandwiching a boron nitride tunneling barrier. To investigate the effects of the unavoidable misalignment in experiments, we introduce a tunable angular misorientation between 2D layers to the modeled system. Current-Voltage (I-V) characteristics of the device exhibit multiple NDR peaks originating from distinct mechanisms. A unique NDR mechanism arising from the lattice mismatch is captured and it depends on both the twisting angle and voltage bias. Analytical expressions for the positions of the resonant peaks observed in I-V characteristic are developed. To capture the slight degradation of PVR ratios observed in experiments when temperature increases from 2K to 300K, electron-photon scattering decoherence has been added to the simulation, indicating a good agreement with experiment works as well as a robust preservation of resonant tunneling feature.

Negative Differential Resistance in AlGaAs/GaAs Heterostructures

Negative Differential Resistance in the I–V Curves of Al2O3/AlGaN/GaN MIS Structures

Negative Transconductance and Negative Differential Resistance in Asymmetric Narrow Bandgap 2D-3D Heterostructures

Observation of real space transfer in GaAs-AlGaAs heterostructure grown by LPE

Negative Capacitance in Gan/Algan Heterojunction Dual-Band Detectors

Probing Semiconductor Band Structures and Heterojunction Interface Properties with Ballistic Carrier Emission: Gaas/Alxga1-Xas As A Model System

Bidirectional Negative Differential Resistance in AlN/GaN Resonant Tunneling Diodes Grown on Freestanding GaN

Non-equilibrium character of resistive switching and negative differential resistance in Ga-doped Cr2O3 system

Interface roughness governed negative magnetoresistances in two-dimensional electron gases in AlGaN/GaN heterostructures

Negative differential resistance and current self-oscillation in doped GaAs/AlAs superlattices

Repeatable Room Temperature Negative Differential Resistance in AlN/GaN Resonant Tunneling Diodes Grown on Sapphire

Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures

Negative differential resistance and characteristic nonlinear electromagnetic response of a Topological Insulator

Negative Minority-Electron Mobility in A Nonequilibrium Electron-Hole Plasma

Negative Transconductance Effect in P-Gan Gate AlGaN/GaN HEMTs by Traps in Unintentionally Doped GaN Buffer Layer*

Theoretical study on negative differential resistance in transition metal dichalcogenide planar heterostructures

Negative Differential Resistance in Graphene Boron Nitride Heterostructure Controlled by Twist and Phonon-Scattering

Theoretical study on the negative differential resistance behavior of N-doped GeSe monolayer

Probing Negative Differential Resistance on Si(111)-3×3-Ag Surface with Scanning Tunneling Microscopy

Modulation of Negative Differential Resistance in Graphene Field-Effect Transistors by Tuning the Contact Resistances

Superlattice Bloch Electron Conduction and Negative Differential Mobility