Junctionless Negative‐Differential‐Resistance Device using 2D Van‐Der‐Waals Layered Materials for Ternary Parallel Computing
Taeran Lee,Kil‐Su Jung,Seunghwan Seo,Junseo Lee,Jihye Park,Sumin Kang,Jeongwon Park,Juncheol Kang,Hogeun Ahn,Suhyun Kim,Hae Won Lee,Doyoon Lee,Ki Seok Kim,Hyunseok Kim,Keun Heo,Sunmean Kim,Sang‐Hoon Bae,Seokhyeong Kang,Kibum Kang,Jeehwan Kim,Jin‐Hong Park
DOI: https://doi.org/10.1002/adma.202310015
IF: 29.4
2024-03-08
Advanced Materials
Abstract:Negative‐differential‐resistance (NDR) devices offer a promising pathway for developing future computing technologies characterized by exceptionally low energy consumption, especially multi‐valued logic computing. Nevertheless, conventional approaches aimed at attaining the NDR phenomenon involve intricate junction configurations and/or external doping processes in the channel region, impeding the progress of NDR devices to the circuit and system levels. Here, we present an NDR device that incorporates a channel without junctions. We achieved the NDR phenomenon by introducing a metal‐insulator‐semiconductor capacitor to a portion of the channel area. This approach establishes partial potential barrier and well that effectively restrict the movement of hole and electron carriers within specific voltage ranges. Consequently, this facilitates the implementation of both a ternary inverter and a ternary static‐random‐access‐memory, which are essential components in the development of multi‐valued logic computing technology. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology