Gate-Tunable Negative Differential Resistance Behaviors in a hBN-Encapsulated BP-MoS 2 Heterojunction
Fan Wu,He Tian,Zhaoyi Yan,Jie Ren,Thomas Hirtz,Guangyang Gou,Yang Shen,Yi Yang,Tian-Ling Ren
DOI: https://doi.org/10.1021/acsami.1c03959
2021-05-25
Abstract:Two-dimensional (2D) heterostructures show great potential in achieving negative differential resistance (NDR) effects by Esaki diodes and or resonant tunneling diodes. However, most of the reported Esaki diode-based NDR devices realized by bulk 2D films lack sufficient gate tunability, and the tuning of NDR behavior from appearing to vanishing remains elusive. Here, a gate-tunable NDR device is reported based on a vertically stacked black phosphorus (BP) and molybdenum disulfide (MoS<sub>2</sub>) thin 2D heterojunction. At room temperature, a rectifying ratio of ∼6 orders of magnitude from a reverse rectifying diode to a forward rectifying diode by gate modulation is obtained. Through analyzing the temperature-dependent electrical properties, the tunneling mechanism at a certain gate voltage range is revealed. Moreover, the switchable and continuously gate-tunable NDR behavior is realized with a maximum peak-to-valley ratio of 1.23 at 77 K, as shown in the <i>I</i><sub>DS</sub> mappings by sweeping <i>V</i><sub>DS</sub> under different <i>V</i><sub>GS</sub>. In addition, a compact model for gate-tunable NDR behavior in 2D heterostructures is proposed. To our best knowledge, this is the first demonstration of NDR behavior in BP-MoS<sub>2</sub> heterostructures. Consequently, this work sheds light on the gate-tunable NDR devices and reconfigurable logic devices for realizing ternary and reconfigurable logic systems.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c03959?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c03959</a>.Discussions of the thin high-<i>k</i> dielectric layer's quality, Raman spectrum of BP and MoS<sub>2</sub>, hysteresis of the BP FET at room temperature, Schottky barrier of the MoS<sub>2</sub>/Pd interface, comparison between band-to-band-tunneling simulation results and experimental curves, approximate band offset of this BP-MoS<sub>2</sub> heterojunction device, the <i>E</i><sub>F</sub> extractions of BP and MoS<sub>2</sub> at room temperature, <i>E</i><sub>F</sub> extractions of MoS<sub>2</sub> in 5 temperature points, detailed temperature-dependent MoS<sub>2</sub> FET behaviors, another temperature-dependent behavior of the MoS<sub>2</sub> FET device with Pd contact, temperature-dependent BP-MoS<sub>2</sub> heterojunction FET behaviors, reproducible NDR behaviors in three BP-MoS<sub>2</sub> devices, detailed hysteresis of NDR behavior, <i>E</i><sub>F</sub> extractions of BP and MoS<sub>2</sub> at 77 K, and detailed NDR simulation section (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c03959/suppl_file/am1c03959_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology