Negative Differential Resistance in Multilayer MoTe2 FET

C.Z. Ning

DOI: https://doi.org/10.1109/oecc56963.2023.10209940

2023-01-01

Abstract:Recently, NDR and hysteresis in TMDCs devices have been reported for logic applications. Here, we demonstrated a NDR multilayer MoTe2 device with a high peak current density of 37 $\mathrm{m}\mathrm{A}/\mathrm{m}\mathrm{m}^{2}$ and a high PVR of 2. © 2023 The Author(s)

What problem does this paper attempt to address?

Investigation of negative differential resistance in metal-edge-contact MoS2 field effect transistor

Ankur Garg,Mohammad Ehteshamuddin,Somit Sharma,Avirup Dasgupta

DOI: https://doi.org/10.1063/5.0190143

IF: 2.877

2024-02-09

Journal of Applied Physics

Abstract:Negative differential resistance (NDR) is observed in various emerging electronic devices. As compared to the conventional silicon-based field effect transistor (FET), the NDR is widely investigated in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs. In this work, we study the NDR effect for the TMD-based metal-edge-contact MoS2 double-gate FET with 10 nm channel length. The multiscale atomistic simulation is demonstrated for the lateral heterostructure of a metal–semiconductor–metal FET by density functional theory, maximally localized Wannier function tight-binding Hamiltonian, and non-equilibrium Green’s function methods. The quantum transport model in the given lateral heterostructure resulted in NDR in a double-gate FET. Here, we focus on the NDR by the systematic study of the transmission spectrum of the metal-edge-contact MoS2 channel FET and finally compare it with zero NDR ideal highly doped FET. The peak-to-valley ratio in the NDR response can be modulated with the change in the gate-to-source voltage and can be used to explore various future electronic applications.

physics, applied
Negative Differential Resistance in Negative Capacitance FETs

Jiuren Zhou,Genquan Han,Jing Li,Yan Liu,Yue Peng,Jincheng Zhang,Qing-Qing Sun,David Wei Zhang,Yue Hao

DOI: https://doi.org/10.1109/led.2018.2810071

IF: 4.8157

2018-01-01

IEEE Electron Device Letters

Abstract:We report the investigation of negative differential resistance (NDR) in negative capacitance (NC) germanium (Ge) pFETs. The NDR in NC transistors is attributed to the coupling of drain voltage to the internal gate voltage V-int via the gate-to-drain capacitance. It is demonstrated that NDR strongly depends on the matching between the NC induced by ferroelectric capacitance C-FE and the positive capacitance associated with the underlying transistor capacitance C-MOS. For the non-hysteretic devices, NDR gets pronounced with an increased thickness of ferroelectric film t(fe) and V-GS. This is attributed to the fact that the drain coupling factor is improved with an increased t(fe) and V-GS, leading to the better matching between C-FE and C-MOS. For the hysteretic NC transistors, however, NDR is only obtained at the lower V-GS, but not observed at higher V-GS.
Negative Differential Resistance with Ultralow Peak-to-Valley Voltage Difference in Td-WTe 2 /2H-MoS 2 Heterostructure

Shida Huo,Hengze Qu,Fanying Meng,Zhe Zhang,Zheyu Yang,Shengli Zhang,Xiaodong Hu,Enxiu Wu

DOI: https://doi.org/10.1021/acs.nanolett.4c03263

IF: 10.8

2024-09-14

Nano Letters

Abstract:Negative differential resistance (NDR) devices with a low peak-to-valley voltage difference (ΔV) exhibit a high cut off frequency and low power consumption efficiency, which is significant for fabricating high-performance oscillators. However, achieving an ultralow ΔV is challenging. In this work, we report the first construction of an NDR device utilizing a van der Waals heterostructure composed of semimetallic Td-WTe(2) and semiconducting 2H-MoS(2). Our findings reveal that the narrow energy...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Negative Capacitance 2d Mos2 Transistors With Sub-60mv/Dec Subthreshold Swing Over 6 Orders, 250 Mu A/Mu M Current Density, And Nearly-Hysteresis-Free

Zhihao Yu,Hanchen Wang,Weisheng Li,Sheng Xu,Xiongfei Song,Shuxian Wang,Peng Wang,Peng Zhou,Yi Shi,Yang Chai,Xinran Wang

DOI: https://doi.org/10.1109/iedm.2017.8268448

2017-01-01

Abstract:To realize steep-slope MoS2 n-type FET, we fabricate negative capacitance FET (NCFET) structure using ferroelectric HfZrOx (HZO)/AlOx as dielectric layer. The MoS2 NCFET devices exhibit ultra-low subthreshold swing (SS) of 23 mV/dec, sub-60mV/dec over 6 orders of I-D, nearly hysteresis-free up to V-DS=1V, small vertical bar V-th vertical bar <0.4V, I-ON/I-OFF ratio > 10(9), and small DIBL of 25 mV/V. Importantly, we can modulate 5 orders of ID using a gate drive of 232 mV, clearly demonstrating the potential of MoS2 NCFET for low-power electronics applications. Furthermore, compared to normal MoS2 FET with 11.2 nm equivalent oxide thickness (EOT), the NCFET achieve 60% improvement in I-D (250 mu A/mu m) and 4 times improvement in transconductance.
Investigation of negative differential resistance on negative capacitance Germanium source vertical TFET

K Vanlalawmpuia

DOI: https://doi.org/10.1088/1402-4896/ad4927

2024-05-10

Physica Scripta

Abstract:In this article, a systematic investigation of negative differential resistance (NDR) on a negative capacitance Germanium source vertical TFET (NC-Ge-vTFET) is presented. The implementation and increased ferroelectric (FE) film thickness (t FE ) offers a significantly high current ratio, improved subthreshold slope, high transconductance with a very low hysteresis voltage. However, NDR is exhibited and is increasingly prominent at lower gate voltage and higher t FE due to the coupling of the internal gate and drain voltages. NDR is an undesired effect in analog circuits that has to be mitigated. To suppress the impacts of NDR on the device, different approaches are carried out: varying the overlap channel thickness, gate length, drain doping and gate-drain underlap. Circuit analysis is carried out with the implementation of NC-Ge-vTFET as digital inverter. When the gate-drain underlap length is increased from 0 nm to 15 nm, the propagation delay is significantly reduced by 30.98%. Benchmarking of the proposed device has also been carried out. This renders the gate-drain underlapped NC-Ge-vTFET to be a viable candidate for high performance, nanoscale, low power digital applications.

physics, multidisciplinary
S-type Negative Differential Resistance in Semiconducting Transition-Metal Dichalcogenides

Miao Wang,Chengyu Wang,Chenchen Wu,Qiao Li,Chen Pan,Cong Wang,Shi-Jun Liang,Feng Miao

DOI: https://doi.org/10.48550/arXiv.1901.07161

2019-01-22

Mesoscale and Nanoscale Physics

Abstract:Current-controlled (also known as "S-type") negative differential resistance (NDR) is of crucial importance to many emerging applications including neuromorphic computing and high-density memristors integration. However, the experimental realization of S-type NDR based on conventional mechanisms poses demanding requirements on materials, which greatly limits their potential applications. Here, we experimentally identify that semiconducting transition metal dichalcogenides (TMDs) can host a bipolar S-type NDR devices. Theoretical simulations indicate that the origin of the NDR in these devices arises from a thermal feedback mechanism. Furthermore, we demonstrate the potential applications of TMDs based S-type NDR device in signal processing and neuromorphic electronics.
Negative Capacitance 2D MoS2 Transistors with Sub-60Mv/dec Subthreshold Swing over 6 Orders, 250 Μa/μm Current Density, and Nearly-Hysteresis-free

Zhihao Yu,Hanchen Wang,Weisheng Li,Sheng Xu,Xiongfei Song,Shuxian Wang,Peng Wang,Peng Zhou,Yi Shi,Yang Chai,Xinran Wang

DOI: https://doi.org/10.1109/iedm.2017.8268448

2017-01-01

Abstract:To realize steep-slope MoS2 n-type FET, we fabricate negative capacitance FET (NCFET) structure using ferroelectric HfZrOx (HZO)/AlOx as dielectric layer. The MoS2 NCFET devices exhibit ultra-low subthreshold swing (SS) of 23 mV/dec, sub-60mV/dec over 6 orders of Id, nearly hysteresis-free up to V ds = 1V, small |V th | <0.4V, I on /I off ratio >10 9 , and small DIBL of 25 mV/V. Importantly, we can modulate 5 orders of Id using a gate drive of 232 mV, clearly demonstrating the potential of MoS2 NCFET for low-power electronics applications. Furthermore, compared to normal MoS 2 FET with 11.2 nm equivalent oxide thickness (EOT), the NCFET achieve 60% improvement in Id (250 μA/μm) and 4 times improvement in transconductance.
Negative differential resistance based on phase transformation

Takashi Harumoto,Hiroyuki Fujiki,Ji Shi,Yoshio Nakamura,Yuji Sutou

DOI: https://doi.org/10.1039/d3mh00657c

2023-10-30

Abstract:The negative differential resistance (NDR) device is attracting attention because of its broad potential application in neuromorphic computing and non-volatile memory. However, only a limited range of materials show NDR and, therefore, there is less choice in material selection for NDR devices. Considering this issue, we here demonstrate a novel current controlled NDR device based on phase transformation. To the best of our knowledge, this report is the first experimental demonstration that NDR can be induced by phase transformation. We believe that the impact of this demonstration is very large, as phase transformation is the most common phenomenon in materials and consequently most materials can be reconsidered as possible candidates for NDR devices. The prototype NDR device is constructed using hydrogen absorbing metal palladium (Pd) thin-wire and the phase transformation from metal-hydride to metal is employed for the demonstration. The observed NDR property shows a strong dependence on the current sweep speed. Also, it exhibits no current polarity dependence. Therefore, the NDR device based on phase transformation is significantly different from typical NDR devices such as tunnel diodes and memristors. The prototype NDR device has been found to be very useful for evaluating the hydrogen storage properties of metals. The advantage of this analysis method is that the storage properties can be acquired just by sweeping the applied current. This demonstration offers novel directions for both the development and utilization of NDR devices.
Negative Differential Resistance in Carbon-Based Nanostructures

S.A. Evlashin,M.A. Tarkhov,D.A. Chernodubov,A.V. Inyushkin,A.A. Pilevsky,P.V. Dyakonov,A.A. Pavlov,N.V. Suetin,I.S. Akhatov,V. Perebeinos

DOI: https://doi.org/10.1103/PhysRevApplied.15.054057

2021-05-11

Abstract:Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor devices in the last more than half a century. Here, we report NDR behavior formation in randomly oriented graphene-like nanostructures up to 37 K and high on-current density up to 10^5 A/cm^2. Our modeling of the current-voltage characteristics, including the self-heating effects, suggests that strong temperature dependence of the low-bias resistance is responsible for the nonlinear electrical behavior. Our findings open opportunities for the practical realization of the on-demand NDR behavior in nanostructures of 2D and 3D material-based devices via heat management in the conducting films and the underlying substrates.

Mesoscale and Nanoscale Physics,Materials Science
Negative Transconductance in Multi-Layer Organic Thin-Film Transistors

Zhongzhong Luo,Yujie Cao,Jinyu Liu,Yimeng Li,Daowei He,Yi Shi,Wenping Hu,Huanli Dong,Xinran Wang

DOI: https://doi.org/10.1088/1361-6528/aaea42

IF: 3.5

2018-01-01

Nanotechnology

Abstract:Negative transconductance (NTC) refers to the phenomenon of the N-shape transfer characteristic appearing with a current peak and valley. It has been extensively studied in the past few decades due to its applications in logic and memory devices. Here, we observe unique antibipolar transfer characteristics and NTC behavior in multi-layer 2,6-diphenyl anthracene organic thin-film transistors grown on h-BN, which is due to the vertical potential barrier between the charge accumulation region near the substrate and the neutral bulk region under the contacts. The applied extrinsic electric field could effectively modulate the barrier height, resulting in a competition for charge carrier transport between lateral and vertical directions. Based on the NTC and antibipolar properties, a frequency doubler has been fabricated on a single transistor, which provides a new building block for organic logic circuits.
Negative Differential Resistances Observed in Suspended-Channel Fets

Haiyuan Gao,Huiquan Wang,Yang Xu,Zhonghe Jin

DOI: https://doi.org/10.1063/1.3666667

2011-01-01

Abstract:A new type of negative differential resistance (NDR) device based on the electro‐mechanical principle, named suspended‐channel FET (SC‐FET), is proposed. The FET channel is built up on a suspended nano‐bridge. When voltages are applied between the bridge and the substrate, the channel together with the bridge is pulled towards the substrate. The output and transfer characteristics of the SC‐FET are influenced by the vertical displacement and uniaxial strain near the channel. NDR is observed in the saturation region, which can be explained by an electromechanical coupling model.
Gate-Tunable Negative Differential Resistance Behaviors in a hBN-Encapsulated BP-MoS 2 Heterojunction

Fan Wu,He Tian,Zhaoyi Yan,Jie Ren,Thomas Hirtz,Guangyang Gou,Yang Shen,Yi Yang,Tian-Ling Ren

DOI: https://doi.org/10.1021/acsami.1c03959

2021-05-25

Abstract:Two-dimensional (2D) heterostructures show great potential in achieving negative differential resistance (NDR) effects by Esaki diodes and or resonant tunneling diodes. However, most of the reported Esaki diode-based NDR devices realized by bulk 2D films lack sufficient gate tunability, and the tuning of NDR behavior from appearing to vanishing remains elusive. Here, a gate-tunable NDR device is reported based on a vertically stacked black phosphorus (BP) and molybdenum disulfide (MoS2) thin 2D heterojunction. At room temperature, a rectifying ratio of ∼6 orders of magnitude from a reverse rectifying diode to a forward rectifying diode by gate modulation is obtained. Through analyzing the temperature-dependent electrical properties, the tunneling mechanism at a certain gate voltage range is revealed. Moreover, the switchable and continuously gate-tunable NDR behavior is realized with a maximum peak-to-valley ratio of 1.23 at 77 K, as shown in the IDS mappings by sweeping VDS under different VGS. In addition, a compact model for gate-tunable NDR behavior in 2D heterostructures is proposed. To our best knowledge, this is the first demonstration of NDR behavior in BP-MoS2 heterostructures. Consequently, this work sheds light on the gate-tunable NDR devices and reconfigurable logic devices for realizing ternary and reconfigurable logic systems.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c03959?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c03959</a>.Discussions of the thin high-k dielectric layer's quality, Raman spectrum of BP and MoS2, hysteresis of the BP FET at room temperature, Schottky barrier of the MoS2/Pd interface, comparison between band-to-band-tunneling simulation results and experimental curves, approximate band offset of this BP-MoS2 heterojunction device, the EF extractions of BP and MoS2 at room temperature, EF extractions of MoS2 in 5 temperature points, detailed temperature-dependent MoS2 FET behaviors, another temperature-dependent behavior of the MoS2 FET device with Pd contact, temperature-dependent BP-MoS2 heterojunction FET behaviors, reproducible NDR behaviors in three BP-MoS2 devices, detailed hysteresis of NDR behavior, EF extractions of BP and MoS2 at 77 K, and detailed NDR simulation section (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c03959/suppl_file/am1c03959_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Giant Negative Differential Resistance Effect Caused by Cutting off Acceptable Quantum States in Carbon Nanotube Tunneling Devices

Li Fang,Chenguang Qiu,Hongjie Zhang,Yue Hu,Lian-Mao Peng

DOI: https://doi.org/10.1002/aelm.202101314

IF: 6.2

2022-01-01

Advanced Electronic Materials

Abstract:Tunneling devices with negative differential resistance (NDR) characteristic often suffer from bad peak-to-valley current ratios (PVR), which is due to the existence of the excess current generated by trap-assisted tunneling and phonon-assisted tunneling. How to suppress the excess current and improve PVR is a great challenge. Here, the authors propose a new strategy to suppress the excess current through cutting off the acceptable quantum states, and verify this mechanism by constructing a novel four-terminal tunneling device, which consists of the carbon nanotube as channel, Pd and Sc electrode for p-type and n-type Ohmic contact, respectively, and self-aligned split dual gates that modulate the channel to form the tunneling junction. In such a device, the window of acceptable quantum states can be cut off by increasing the sweeping rate ratio between the gate voltage to the drain voltage, so that the excess current can be suppressed. The devices exhibit significant NDR characteristics with a giant PVR of 13 500 at room temperature, and the peak current density can be up to 7 x 10(4) A cm(-2), both of which are the highest values among all the reported low-dimensional tunneling devices.
Negative Differential Resistance in Graphene Nanoribbon Superlattice Field-Effect Transistors

Sheng Chang,Lei Zhao,Yawei Lv,Hao Wang,Qijun Huang,Jin He

DOI: https://doi.org/10.1049/mnl.2015.0131

2015-01-01

Micro & Nano Letters

Abstract:Different from researches in two-terminal nanoscale graphene structures, the negative differential resistance (NDR) phenomenon in graphene nanoribbon superlattice (GNSL) field-effect transistors (FETs) is studied in this reported work. Numerical analyses of two types of GNSL FETs with different gate voltages reveal that NDR occurs in some 'Z'-type GNSL FETs under some gate voltages, which develops NDR research compared with the traditional two-terminal nanoscale structures. Based on these results, two trends are observed: the 3m + 2 series GNSL FETs easily exhibit NDR, whereas it is more difficult to achieve this phenomenon with narrow FETs. This phenomenon is explained by the transmission coefficient as well as ab-initio calculations of the energy levels, where the entire channel of the FET is considered as a supercell. Through this analysis, the effect of gate control on energy-level localisation is uncovered, and a heterojunction-like explanation is proposed. This new explanation bridges the gap between a novel structure's physical analysis and the general semiconductor device concept, which can also provide inspiration for improving our understanding of novel nanostructure devices.
Computational study of transition metal dichalcogenide cold source MOSFETs with sub-60 mV per decade and negative differential resistance effect

Yiheng Yin,Zhaofu Zhang,Chen Shao,John Robertson,Yuzheng Guo

DOI: https://doi.org/10.1038/s41699-022-00332-6

IF: 17.694

2022-08-21

NanoScience and Technology

Abstract:To extend the Moore's law in 5 nm node, a large number of two dimensional (2D) materials and devices have been researched, among which the 'cold' metals 2H MS 2 (M = Nb, Ta) with unique band structures are expected to achieve the sub-60 mVdec −1 subthreshold swing (SS). We explored the electronic properties and ballistic quantum transport performance of 'cold' metals and the corresponding MOSFETs with idealized structures. The studied 'cold' metal field-effect transistors (CM-FETs) based on the 'cold' metals are capable to fulfill the high-performance (HP) and low-dissipation (LP) goals simultaneously, as required by the International Technology Roadmap for Semiconductors (ITRS). Moreover, gaps of 'cold' metals CM-FETs also demonstrate negative differential resistance (NDR) property, allowing us to further extend the use of CM-FETs. Owing to the wide transmission path in the broken gap structure of NbS 2 /MoS 2 heterojunction, the 4110 μAμm −1 peak current, several orders of magnitude higher than the typical tunneling diode, is achieved by NbS 2 /MoS 2 CM-FET. The largest peak-valley ratio (PVR) 1.1×10 6 is obtained by TaS 2 /MoS 2 CM-FET with V GS = −1 V at room temperature. Our results claim that the superior on-state current, SS, cut-off frequency and NDR effect can be obtained by CM-FETs simultaneously. The study of CM-FETs provides a practicable solution for state-of-the-art logic device in sub 5 nm node for both more Moore roadmap and more than Moore roadmap applications.
Gate-Tunable Negative Differential Resistance Behaviors in a Hbn-Encapsulated BP-MoS2 Heterojunction

Fan Wu,He Tian,Zhaoyi Yan,Jie Ren,Thomas Hirtz,Guangyang Gou,Yang Shen,Yi Yang,Tian-Ling Ren

DOI: https://doi.org/10.1021/acsami.1c03959

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:Two-dimensional (2D) heterostructures show great potential in achieving negative differential resistance (NDR) effects by Esaki diodes and or resonant tunneling diodes. However, most of the reported Esaki diode-based NDR devices realized by bulk 2D films lack sufficient gate tunability, and the tuning of NDR behavior from appearing to vanishing remains elusive. Here, a gate-tunable NDR device is reported based on a vertically stacked black phosphorus (BP) and molybdenum disulfide (MoS2) thin 2D heterojunction. At room temperature, a rectifying ratio of ∼6 orders of magnitude from a reverse rectifying diode to a forward rectifying diode by gate modulation is obtained. Through analyzing the temperature-dependent electrical properties, the tunneling mechanism at a certain gate voltage range is revealed. Moreover, the switchable and continuously gate-tunable NDR behavior is realized with a maximum peak-to-valley ratio of 1.23 at 77 K, as shown in the IDS mappings by sweeping VDS under different VGS. In addition, a compact model for gate-tunable NDR behavior in 2D heterostructures is proposed. To our best knowledge, this is the first demonstration of NDR behavior in BP-MoS2 heterostructures. Consequently, this work sheds light on the gate-tunable NDR devices and reconfigurable logic devices for realizing ternary and reconfigurable logic systems.
Theoretical study on negative differential resistance in transition metal dichalcogenide planar heterostructures

Dan-Na Liu,Sha-Sha Ke,Rui-Yang Yuan,Yong Guo

DOI: https://doi.org/10.1063/5.0142343

IF: 4

2023-05-22

Applied Physics Letters

Abstract:Two types of WS2/MoX2/WS2 (X = S, Se) planar heterostructures driven by bias are theoretically proposed and studied, showing the pronounced negative differential resistance (NDR) effect. It is demonstrated that the maximum peak-to-valley ratio (mPVR) and current peak strongly depend on the temperature, and the enhanced mPVR can be realized by tuning the device length. In particular, type B (X = Se) has a more remarkable NDR effect than type A (X = S). Our work provides promising possibilities for designing and manufacturing future low-power electronic devices based on monolayer transition metal dichalcogenide planar heterostructures under low bias regime.

physics, applied
Modulation of Negative Differential Resistance in Graphene Field-Effect Transistors by Tuning the Contact Resistances

P. X. Tran

DOI: https://doi.org/10.1007/s11664-018-6480-6

IF: 2.1

2018-07-03

Journal of Electronic Materials

Abstract:Graphene and molybdenum disulfide are two-dimensional novel materials considered promising for nanoscale electronic devices. Due to high carrier mobility and in spite of lacking a bandgap, nanoscale graphene transistors have been demonstrated to reach a cut-off frequency above 400 GHz. The absence of bandgap in graphene leads to a remarkable band-to-band tunneling property in electron devices with negative differential resistance. Ultra-thin field-effect transistors fabricated with graphene as gate conducting channels have been shown experimentally to exhibit negative differential resistance (NDR) with widespread appeal for both digital and analog electronics. NDR devices like the Esaki p–n junction have been known to have applications for high frequency oscillators, fast logic switches, memories and low-power amplifiers. In this work, a semi-analytical model equation for transfer characteristics of graphene transistors is developed to successfully model the NDR. Data from three known experimental devices exhibiting NDR with gate length from 500 nm to 3 μm are shown to match well with theoretical modeled results. Numerical calculations using the model equation show that at a fixed gate bias, NDR can be modulated by tuning the value of contact resistance. The result also shows that separate onset of NDR in purely electron current or hole current can be modeled with this equation and matches experimental data.

engineering, electrical & electronic,materials science, multidisciplinary,physics, applied
2D Negative Capacitance Field-Effect Transistor with Organic Ferroelectrics

Heng Zhang,Yan Chen,Shijin Ding,Jianlu Wang,Wenzhong Bao,David Wei Zhang,Peng Zhou

DOI: https://doi.org/10.1088/1361-6528/aab9e6

IF: 3.5

2018-01-01

Nanotechnology

Abstract:In the past fifty years, complementary metal-oxide-semiconductor integrated circuits have undergone significant development, but Moore’s law will soon come to an end. In order to break through the physical limit of Moore’s law, 2D materials have been widely used in many electronic devices because of their high mobility and excellent mechanical flexibility. And the emergence of a negative capacitance field-effect transistor (NCFET) could not only break the thermal limit of conventional devices, but reduce the operating voltage and power consumption. This paper demonstrates a 2D NCFET that treats molybdenum disulfide as a channel material and organic P(VDF-TrFE) as a gate dielectric directly. This represents a new attempt to prepare NCFETs and produce flexible electronic devices. It exhibits a 10^6 on-/off-current ratio. And the minimum subthreshold swing (SS) of the 21 mV/decade and average SS of the 44 mV/decade in four orders of magnitude of drain current can also be observed at room temperature of 300 K.
Negative-to-Positive Differential Resistance Transition in Ferroelectric FET: Physical Insight and Utilization in Analog Circuits

Nitanshu Chauhan,Navjeet Bagga,Shashank Banchhor,Arnab Datta,Sudeb Dasgupta,Anand Bulusu

DOI: https://doi.org/10.1109/TUFFC.2021.3116897

Abstract:In this article, for the first time, we explained a detailed physical insight for negative differential resistance (NDR) to positive differential resistance (PDR) transition in a ferroelectric (FE)-based negative capacitance (NC) FET and also its dependence on the device terminal voltages. Using extensive well-calibrated TCAD simulations, we have investigated this phenomenon on fully depleted silicon on insulator (FDSOI)-NCFET. The NDR-to-PDR transition occurs due to FE layer capacitance changes from a negative to positive state during channel pinchoff. This, in turn, results in a valley point in the output characteristic ( IDS - VDS ) at which the output resistance is infinite. We also found that we could alter the valley point location by modulating the vertical electric field through the FE layer in the channel pinchoff region using body bias ( VBB ). The interface oxide charges also impacted the NDR to PDR transition, and a positive interface charge results in faster NDR to PDR transition. Furthermore, we have utilized the modulation in the NDR-to-PDR transition due to VBB for designing a current mirror. Results show that the output current ( IOUT ) variation due to VDS reduces from ~8% to ~2% with VBB . We have also designed a single-stage common source (CS) amplifier and provided design guidelines to achieve a higher gain in the NDR region. The results obtained using a small-signal model of the FDSOI-NCFET demonstrate that ~25% higher gain can be achieved with the discussed design guidelines in the NDR region compared to the transition region of IDS - VDS . We have also explored the device scaling effect on the amplifier gain and found that ~ 2.23× gain can be increased with smaller channel length and higher device width.

Negative Differential Resistance in Multilayer MoTe2 FET

Investigation of negative differential resistance in metal-edge-contact MoS2 field effect transistor

Negative Differential Resistance in Negative Capacitance FETs

Negative Differential Resistance with Ultralow Peak-to-Valley Voltage Difference in Td-WTe 2 /2H-MoS 2 Heterostructure

Negative Capacitance 2d Mos2 Transistors With Sub-60mv/Dec Subthreshold Swing Over 6 Orders, 250 Mu A/Mu M Current Density, And Nearly-Hysteresis-Free

Investigation of negative differential resistance on negative capacitance Germanium source vertical TFET

S-type Negative Differential Resistance in Semiconducting Transition-Metal Dichalcogenides

Negative Capacitance 2D MoS2 Transistors with Sub-60Mv/dec Subthreshold Swing over 6 Orders, 250 Μa/μm Current Density, and Nearly-Hysteresis-free

Negative differential resistance based on phase transformation

Negative Differential Resistance in Carbon-Based Nanostructures

Negative Transconductance in Multi-Layer Organic Thin-Film Transistors

Negative Differential Resistances Observed in Suspended-Channel Fets

Gate-Tunable Negative Differential Resistance Behaviors in a hBN-Encapsulated BP-MoS 2 Heterojunction

Giant Negative Differential Resistance Effect Caused by Cutting off Acceptable Quantum States in Carbon Nanotube Tunneling Devices

Negative Differential Resistance in Graphene Nanoribbon Superlattice Field-Effect Transistors

Computational study of transition metal dichalcogenide cold source MOSFETs with sub-60 mV per decade and negative differential resistance effect

Gate-Tunable Negative Differential Resistance Behaviors in a Hbn-Encapsulated BP-MoS2 Heterojunction

Theoretical study on negative differential resistance in transition metal dichalcogenide planar heterostructures

Modulation of Negative Differential Resistance in Graphene Field-Effect Transistors by Tuning the Contact Resistances

2D Negative Capacitance Field-Effect Transistor with Organic Ferroelectrics

Negative-to-Positive Differential Resistance Transition in Ferroelectric FET: Physical Insight and Utilization in Analog Circuits