Abstract:The transverse magnetoconductivity ${\ensuremath{\sigma}}_{\mathrm{xx}}$ of a two-dimensional electron gas (2D EG) in selectively doped ${\mathrm{Al}}_{0.3}$${\mathrm{Ga}}_{0.7}$As/ ${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{In}}_{\mathrm{x}}$As/GaAs pseudomorphic structures is shown to behave very differently from that of the ${\mathrm{Al}}_{0.3}$${\mathrm{Ga}}_{0.7}$As/GaAs structures in the quantum Hall regime. Well-defined peaks of transverse conductivity ${\ensuremath{\sigma}}_{\mathrm{xx}}$ corresponding to each Landau level were observed and their peak heights increased with the increase of InAs composition. Also, the peak height of ${\ensuremath{\sigma}}_{\mathrm{xx}}$ increases with the Landau number N in the pseudomorphic structure, especially for samples with x\ensuremath{\ge}0.13 ${\ensuremath{\sigma}}_{\mathrm{xx}}$ varies in proportional to N+(1/2, whereas it remains almost unchanged when N increased in the ${\mathrm{Al}}_{\mathrm{y}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{y}}$As/GaAs structures. The behavior of ${\ensuremath{\sigma}}_{\mathrm{xx}}$ for the pseudomorphic structure is very similar to that of the 2D EG formed in the inversion layer of the Si metal-oxide-semiconductor field-effect transistor. The observed difference between the pseudomorphic structure and the ${\mathrm{Al}}_{\mathrm{y}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{y}}$As/GaAs heterostructure is interpreted in terms of the change in the dominant scattering mechanism, i.e., the short-range cluster scattering in the former, and the long-range scattering in the latter.

Magneto-Resistance for Two-Dimensional Electron Gas in Gan/Alxga1-Xn Heterostructure

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Oscillatory Magnetoresistance of the Two-dimensional Electron Gas in Al[sub X]ga[sub 1−x]n∕gan Heterostructures in Tilted Magnetic Fields

Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures

Magnetotransport properties of two-dimensional electron gas in AlxGa(1-x)N/GaN heterostructures

Origin of the Novel Magnetoresistance Oscillation of the Two-Dimensional Electron Gas in Alxga1-Xn/Gan Heterostructures

Transport and Spin Properties of the Two-Dimensional Electron Gas in GaN-based Heterostructures

Interface roughness governed negative magnetoresistances in two-dimensional electron gases in AlGaN/GaN heterostructures

Influence of Al Composition on Transport Properties of Two-Dimensional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures

Weak Localization and Magnetointersubband Scattering Effects in an Alxga1-Xn/Gan Two-Dimensional Electron Gas

Magnetotransport investigation of modulation-doped AlxGa1-xN/GaN heterostructures

Transport properties of the two-dimensional electron gas in A/sub x/Ga/sub 1-x/N/GaN heterostructures

Effective Mass of the Two-Dimensional Electron Gas and Band Nonparabolicity in AlxGa1−xN∕GaN Heterostructures

Magnetotransport Properties of the Two-Dimensional Electron Gas in AlxGa1-xN/GaN Heterostructures under Illumination

Multisubband Transport Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

Transport Properties of Two-Dimensional Electron Gas in Different Subbands in Triangular Quantum Wells at AlxGa1−xN/GaN Heterointerfaces

Magnetointersubband Oscillations Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

Zeeman Spin Splitting of 2DEG in Al_xGa_(1-x)N/GaN Heterostructures

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Magnetoconductivity of a two-dimensional electron gas in Al0.3Ga0.7As/Ga1−xInxAs/GaAs pseudomorphic heterostructures in the quantum hall regime

Magnetotransport Properties of High Equivalent Al Composition AlGaN/GaN Heterostructures Using AlN/GaN Superlattice As a Barrier