Abstract:Resonant tunneling diodes (RTDs) are candidates for high power terahertz oscillators, and form the basis for understanding the quantum confinement and vertical transport in quantum structures such as quantum cascade lasers and quantum cascade detectors. In this work, repeatable negative differential resistance (NDR) is achieved in AIN/GaN RTDs grown on sapphire substrate by plasma-assisted molecular-beam epitaxy. Two reproducible NDR regions sequentially following two preresonance replicas are demonstrated at room temperature. A current region exhibiting negative correlation with temperature and oscillation-like features is first identified under reverse bias, which is interpreted as a combined contribution of weak resonant tunneling channels through different bound states in the well, The revealed peak-to-valley current ratio ranges from 1.1 to 1.8, and peak current density ranges from 5 to 164 kA cm(-2). Using an analytic model, resonant tunneling transports in both bias directions are quantitatively characterized and show good agreements with experiment results, demonstrating the capability of accurate quantum transport control using III-nitride grown on sapphire substrate. The findings will promote the implementation of low cost III-nitride monolithic microwave circuits and resonant tunneling structures based on sapphire, SiC, and even silicon substrates.

Observation of real space transfer in GaAs-AlGaAs heterostructure grown by LPE

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Negative Differential Resistance in AlGaAs/GaAs Heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Observation of the Photoinduced Anomalous Hall Effect in Gan-Based Heterostructures

Negative differential resistance and current self-oscillation in doped GaAs/AlAs superlattices

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Controlling Phase‐Coherent Electron Transport in III‐Nitrides: Toward Room Temperature Negative Differential Resistance in AlGaN/GaN Double Barrier Structures

Origin of the Novel Magnetoresistance Oscillation of the Two-Dimensional Electron Gas in Alxga1-Xn/Gan Heterostructures

Interface roughness governed negative magnetoresistances in two-dimensional electron gases in AlGaN/GaN heterostructures

Nanoscale Visualization of Electronic Properties of AlxGa1-xN/AlyGa1-yN Multiple Quantum-Well Heterostructure by Spreading Resistance Microscopy

Investigation on two-dimensional electron gas in AlxGa1-xN/GaN heterostructures by using Schottky C-V measurement

Room Temperature Resonant Tunneling and Negative Differential Resistance Effects in a Self-Assembed Si Quantum Dot Array

Anomalous Linear Photogalvanic Effect Observed in A Gan-Based Two-Dimensional Electron Gas

Microstructures And Strain Relaxation In Modulation-Doped Alxga1-Xn/Gan Heterostructures

Hysteresis Phenomena of the Two Dimensional Electron Gas Density in Lattice-Matched Inaln/Gan Heterostructures

Probing Semiconductor Band Structures and Heterojunction Interface Properties with Ballistic Carrier Emission: Gaas/Alxga1-Xas As A Model System

Microstrain in Al0.22Ga0.78N/GaN heterostructure studied by X-ray diffraction and scattering

Observation of S-Type Negative Differential Resistance in N-Zno/P-Si Hetero-Junctions

Optical Investigations On Pseudomorphic: Delta-Doped Algaas/Ingaas/Gaas Quantum Wells

Repeatable Room Temperature Negative Differential Resistance in AlN/GaN Resonant Tunneling Diodes Grown on Sapphire