Observation of S-Type Negative Differential Resistance in N-Zno/P-Si Hetero-Junctions

ZG Ji,CX Yang,K Liu,ZZ Ye
DOI: https://doi.org/10.1016/s0022-0248(03)01004-2
IF: 1.8
2003-01-01
Journal of Crystal Growth
Abstract:ZnO films were prepared on p-type silicon wafers by pyrolysis of an ultrasonically nebulized zinc acetate solution. Aluminum electrodes were deposited on the as-prepared ZnO film and at the backside of the p-Si wafer, which forms a n-ZnO/p-Si hetero-junction. It is found that by applying a forward bias of about 6V in vacuum, S-type negative resistance was observed for the structure. The negative resistance was preserved after the hetero-junction was exposed to air.
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