Electron transport in GaN(ZB) and AlN(WZ)

Clóves Gonçalves Rodrigues

DOI: https://doi.org/10.1007/s10853-006-1093-5

2021-10-03

Abstract:Seeking a better understanding of the electron transport in n-doped zinc blende GaN and wurtzite AlN, it was performed here a theoretical study resorting to Non Equilibrium Statistical Operator Method, which provides a set of coupled nonlinear differential evolution equations that provides a description of the dissipative phenomena developed in the system. The ultrafast time evolution (and the steady-state) of the electron drift velocity is obtained assuming different values for the electron effective mass.

Materials Science

What problem does this paper attempt to address?

This paper aims to solve the problem of electron transport in gallium nitride (GaN, zinc - blend structure) and aluminum nitride (AlN, wurtzite structure) under non - equilibrium conditions. Specifically, the research focuses on:

1. **Understanding electron transport characteristics**: In particular, in n - type doped GaN and AlN, how electrons move and their kinetic behaviors when these materials are under the action of an external electric field.

2. **Influence of nonlinear effects**: Traditional transport theories based on the Boltzmann equation have limitations in dealing with nonlinear effects, so a more advanced theoretical framework is required to describe these phenomena.

3. **Proposing a new theoretical method**: The author adopts a nonlinear quantum kinetic theory based on non - equilibrium ensemble formalism - the non - equilibrium statistical operator method (NESOM) to provide a set of coupled nonlinear differential evolution equations for describing dissipative phenomena in the system.

4. **Analyzing the influence of different effective masses on electron drift velocity**: By assuming different values of electron effective mass, the time evolution of electron drift velocity and its steady - state behavior are studied, and the crucial influence of effective mass on electron drift velocity and mobility is explored.

### Specific problems

- **Research background**: In recent years, group - III nitride semiconductors (such as GaN and AlN) have received extensive attention due to their potential applications in optoelectronic devices such as blue - light and yellow - light light - emitting diodes.

- **Research motivation**: In these devices, carriers are usually in a state far from equilibrium, so appropriate non - equilibrium statistical mechanics and thermodynamic formalisms are required to study their optical and transport properties.

- **Research method**: The author uses the non - equilibrium statistical operator method (NESOM), which is a powerful formalism that can provide an elegant and concise analytical treatment for irreversible processes and is applicable to a wide range of experimental situations.

- **Main results**:
- The research shows that the electron drift velocity will experience a transient time of about 0.25 picoseconds before reaching a steady state.
- The smaller the electron effective mass, the more obvious the overshoot phenomenon of the electron drift velocity.
- At an electric field intensity of 80 kV/cm, the electron drift velocities of GaN(ZB) and AlN(WZ) show significant differences under different effective masses respectively.

### Conclusion

This research emphasizes the importance of accurately determining the electron effective mass, which is crucial for theoretical calculations and simulations of electron transport characteristics in GaN(ZB) and AlN(WZ). The research results show that the electron drift velocity and mobility are very sensitive to the electron effective mass, so choosing an appropriate effective mass value is of great significance for understanding and optimizing the performance of these materials.

### Related formulas

1. **Energy evolution equation**
\[
\frac{dE_e(t)}{dt}=eFv(t)-J^{(2)}_{E_e}(t)
\]

2. **Momentum evolution equation**
\[
\frac{dP(t)}{dt}=NeF - J^{(2)}_{P,\text{ph}}(t)-J^{(2)}_{P,\text{imp}}(t)
\]

3. **Phonon energy evolution equation**
\[
\frac{dE_{\text{lo}}(t)}{dt}=J^{(2)}_{\text{lo}}(t)-J^{(2)}_{\text{lo,an}}(t)
\]
\[
\frac{dE_{\text{ac}}(t)}{dt}=J^{(2)}_{\text{ac}}(t)+J^{(2)}_{\text{lo,an}}(t)-J^{(2)}_{\text{ac,dif}}(t)
\]

4. **Electron distribution function**
\[
f_k(t)=\left(\frac{n}{2\pi\hbar^2 m^* k_B T_e(t)}\right)^{3/2}\exp\left(-\frac{\hbar^2(k - m^* v(t))^2}{2m^* k_B T_e(t)}\right)
\]