Abstract:We investigate the electrical and thermal conductivities of the two-dimensional electron gas (2DEG) confined in the quantum well formed at the heterojunction between a thin GaN layer and an AlN layer strained by an Al x Ga1-x N capping layer in the temperature range from 10 to 360 K. The experimental protocol developed to deduce from calorimetric and Hall-effect measurements at a variable temperature the critical characteristics and transport properties of the confined 2DEG is presented. It is found that, in the measured temperature range (10-360 K), the electrical conductivity of the 2DEG is temperature-independent, due to the predominance of scattering processes by interface defects. However, the thermal conductivity shows a linear temperature dependence, mirroring the specific heat of free electrons. The temperature-independent relaxation time associated with the overall electron scattering means that the values obtained for electrical and thermal conductivities are in excellent agreement with those stipulated by the Weidemann-Franz law. It is also found that for weak strain fields in the AlN layer, both the electrical and thermal conductivities of the two-dimensional interfacial electrons increase exponentially with strain. The importance of 2DEG in AlN/GaN quantum wells lies in the fact that the strong piezoelectricity of AlN allows the transport properties of the 2DEG to be tuned or modulated by a weak electric field even with the high density of lattice mismatch induced defects at the AlN-GaN interface .

Diffusion and Ballistic Contributions of Electron–electron Interaction to the Conductivity in an Al0.26Ga0.74N/AlN/GaN Heterostructure

Observation of the Transition from Diffusive Regime to Ballistic Regime of the 2DEG Transport Property in Al Ga1−N/GaN Heterostructures

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

High Temperature Dependence of the Density of Two-Dimensional Electron Gas in Al 0.18 Ga 0.82 N/GaN Heterostructures

High Temperature Performance of GaN and AIxGal-xN/GaN Heterostructures

Observation of the Photoinduced Anomalous Hall Effect in Gan-Based Heterostructures

High-temperature Transport Properties of 2DEG in AlGaN/GaN Heterostructures

High Temperature Performance of GaN and AlxGa1-xN/GaN Heterostructures

Two-dimensional Electron Transport in AlGaN/GaN Heterostructures

Hysteresis Phenomena of the Two Dimensional Electron Gas Density in Lattice-Matched Inaln/Gan Heterostructures

Interface roughness governed negative magnetoresistances in two-dimensional electron gases in AlGaN/GaN heterostructures

Influence of Al Composition on Transport Properties of Two-Dimensional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures

Tuning electrical and thermal conductivities of the two-dimensional electron gas in AlN/GaN heterostructures by piezoelectricity

Improved Transport Properties of the Two-Dimensional Electron Gas in AlGaN∕GaN Heterostructures by AlN Surface Passivation Layer

Magneto-Resistance for Two-Dimensional Electron Gas in Gan/Alxga1-Xn Heterostructure

Transport and Spin Properties of the Two-Dimensional Electron Gas in GaN-based Heterostructures

Effective Mass of the Two-Dimensional Electron Gas and Band Nonparabolicity in AlxGa1−xN∕GaN Heterostructures

Function of Quantum-Confinement Effect in the AlGaN∕AlN∕GaN Heterostructure with an AlN Interfacial Layer