Abstract:Near lattice matched Al0.81In0.19N/GaN heterojunction structures are compared with conventional Al0.3Ga0.7N/GaN heterojunctions in terms of the sheet density and mobility and their dependence on barrier and spacer layer parameters. With the insertion of an AlN spacer, the mobility of both structures is improved dramatically. Self-consistent solution of Poisson-Schrodinger equations was developed in order to determine the band structure and carrier distribution in these GaN based heterostructures in an effort to gain insight into the experimental observations. Surface donor states were included to account for the origin of electrons in 2DEG, which is treated as charge neutralization conditions in the simulation. Also the change in the piezoelectric polarization due to the electromechanical coupling effect, and shift of band gap caused by uniaxial strain were both included in the calculations. The calculated sheet density is close to the measured values, especially for the AlGaN samples investigated, but a notable difference was noted in the AlInN cases. The discrepancy is confirmed to be caused by the existence of a Ga-rich layer on the top of AlN spacer during the growth interruption, which can split the 2DEG into two channels with different mobilities and lower the overall sheet density. When the modifications made necessary by this GaN layer are taken into account in our model for the AlInN barrier case, the calculations match with the experimental data. When the spacer thickness increase from 0.3 to 3 nm, the total sheet density was found to slightly increase experimentally, which agreed with the theoretical prediction.

Two-dimensional Electron Transport in AlGaN/GaN Heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Two-dimensional hot-electron transport in GaAs-AlGaAs heterojunctions

Electric Field Driven Plasmon Dispersion in Algan/Gan High Electron Mobility Transistors

Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures

Subbands Transport of the Two-Dimensional Electron Gas in AlxGa1−xN/GaN Heterostructures

Magnetotransport properties of two-dimensional electron gas in AlxGa(1-x)N/GaN heterostructures

Transport Properties of Two-Dimensional Electron Gas in Different Subbands in Triangular Quantum Wells at AlxGa1−xN/GaN Heterointerfaces

Transport and Spin Properties of the Two-Dimensional Electron Gas in GaN-based Heterostructures

Study Of Two-Dimensional Electron Gas In Aln/Gan Heterostructure By A Self-Consistent Method

Multisubband Transport Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

Optimization of Two-Dimensional Electron Gases and I–V Characteristics for AlGaN/GaN HEMT Devices

Magnetotransport Properties of the Two-Dimensional Electron Gas in AlxGa1-xN/GaN Heterostructures under Illumination

Transport properties of the two-dimensional electron gas in A/sub x/Ga/sub 1-x/N/GaN heterostructures

Fang–Howard Wave Function Modelling of Electron Mobility in AlInGaN/AlN/InGaN/GaN Double Heterostructures*

Influence of Doping on the Two-Dimensional Electron Gas Distribution in Algan/Gan Heterostructure Transistors

Electron Transport in Znmgo/Zno Heterostructures

One-dimensional self-consistent numerical model and two-dimensional electron gases for AlGaN/GaN

Two Dimensional Electron Gas In Gan Heterojunction Field Effect Transistors Structures With Aln Spacer

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors