Abstract:Near lattice matched Al0.81In0.19N/GaN heterojunction structures are compared with conventional Al0.3Ga0.7N/GaN heterojunctions in terms of the sheet density and mobility and their dependence on barrier and spacer layer parameters. With the insertion of an AlN spacer, the mobility of both structures is improved dramatically. Self-consistent solution of Poisson-Schrodinger equations was developed in order to determine the band structure and carrier distribution in these GaN based heterostructures in an effort to gain insight into the experimental observations. Surface donor states were included to account for the origin of electrons in 2DEG, which is treated as charge neutralization conditions in the simulation. Also the change in the piezoelectric polarization due to the electromechanical coupling effect, and shift of band gap caused by uniaxial strain were both included in the calculations. The calculated sheet density is close to the measured values, especially for the AlGaN samples investigated, but a notable difference was noted in the AlInN cases. The discrepancy is confirmed to be caused by the existence of a Ga-rich layer on the top of AlN spacer during the growth interruption, which can split the 2DEG into two channels with different mobilities and lower the overall sheet density. When the modifications made necessary by this GaN layer are taken into account in our model for the AlInN barrier case, the calculations match with the experimental data. When the spacer thickness increase from 0.3 to 3 nm, the total sheet density was found to slightly increase experimentally, which agreed with the theoretical prediction.

One-dimensional self-consistent numerical model and two-dimensional electron gases for AlGaN/GaN

Self-consistent numerical model and optimization of two-dimensional electron gases for AlGaN/GaN HEMT

Optimization of Two-Dimensional Electron Gases and I–V Characteristics for AlGaN/GaN HEMT Devices

Study Of Two-Dimensional Electron Gas In Aln/Gan Heterostructure By A Self-Consistent Method

Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT

First-principles Study of Size Effects on Electrical Properties of AlN/GaN Heterostructured Nanofilms

Influnce of Al-content on the Property of the Two-Dimensional Electron Gases in AlxGa1-xN/GaN Heterostructures

Two Dimensional Electron Gas In Gan Heterojunction Field Effect Transistors Structures With Aln Spacer

Designing Two-Dimensional Electron Gas in AlGaN/InGaN/GaN Heterostructures Through the Incorporated InGaN Layer

Investigation into the Energy Band Diagram and Charge Distribution in AlGaN/GaN Double Heterostructures by Self-Consistent Poisson–Schrödinger Calculations

Two-Dimensional Electron Gas Densities in Algan/Aln/Gan Heterostructures

Numerical Simulation of Two-Dimensional Electron Gas Characteristics of a Novel (inxal1−xn/aln)mqws/gan High Electron Mobility Transistor

Two-dimensional Electron Transport in AlGaN/GaN Heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Two-dimensional electron gas density in high Al content AlxGa1-xN/GaN double heterostructure

Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

Theoretical Study of Improved Two‐dimensional Electron Gas Density in AlGaN/GaN/AlGaN Double Heterostructure

Two-dimensional Electron and Hole Gases in InxGa1−xN/AlyGa1−yN/GaN Heterostructure for Enhancement Mode Operation

Three Subband Occupation of the Two‐Dimensional Electron Gas in Ultrathin Barrier AlN/GaN Heterostructures

Influence of Polarizations and Doping in AlGaN Barrier on the Two-Dimensional Electron-Gas in AlGaN/GaN Heterostruture

Effective Mass of the Two-Dimensional Electron Gas and Band Nonparabolicity in AlxGa1−xN∕GaN Heterostructures