Three Subband Occupation of the Two‐Dimensional Electron Gas in Ultrathin Barrier AlN/GaN Heterostructures

Liuyun Yang,Xinqiang Wang,Tao Wang,Jingyue Wang,Wenjie Zhang,Patrick Quach,Ping Wang,Fang Liu,Duo Li,Ling Chen,Shangfeng Liu,Jiaqi Wei,Xuelin Yang,Fujun Xu,Ning Tang,Wei Tan,Jian Zhang,Weikun Ge,Xiaosong Wu,Chi Zhang,Bo Shen

DOI: https://doi.org/10.1002/adfm.202004450

IF: 19

2020-09-09

Advanced Functional Materials

Abstract:Ultrathin barrier AlN/GaN heterostructure with record low sheet resistance of 82 Ω sq−1 is achieved by molecular beam epitaxy, where Shubnikov‐de Haas oscillations (SdHOs) and quantum Hall effect (QHE) of two‐dimensional electron gas (2DEG) are observed. The fast Fourier transform analysis of the SdHOs demonstrates a three‐subband occupation in the triangle quantum well for the first time, with the electron density of n1 = 2.2 × 1013 cm−2, n2 = 2.3 × 1012 cm−2, and n3 = 8.8 × 1011 cm−2, respectively, and the corresponding energy of 265, 28, and 11 meV below Fermi level. The three‐subband QHE with a superposed feature is also demonstrated for the first time in AlN/GaN heterostructure, with large filling factors at high electron densities. By analyzing the first subband as the dominant part of the superposed QHE, the transport physics of a special magneto‐intersubband scattering is revealed. These results contribute to a better understanding of the quantum physics for 2DEG, leading to a versatile functionality for AlN/GaN devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

What problem does this paper attempt to address?

Three Subband Occupation of the Two‐Dimensional Electron Gas in Ultrathin Barrier AlN/GaN Heterostructures

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