The inherently absent 2-dimensional electron gas in ultra-pure GaN/AlGaN heterostructures

S. Schmult,S. Wirth,V.V. Solovyev,R. Hentschel,A. Wachowiak,A. Großer,I.V. Kukushkin,T. Mikolajick

DOI: https://doi.org/10.48550/arXiv.1812.07942

2018-12-19

Abstract:Gallium nitride (GaN) has emerged as an essential semiconductor material for energy-efficient lighting and electronic applications owing to its large direct bandgap of 3.4 eV. Present GaN/AlGaN heterostructures seemingly feature an inherently existing, highly-mobile 2-dimensional electron gas (2DEG), which results in normally-on transistor characteristics. Here we report on an ultra-pure GaN/AlGaN layer stack grown by molecular beam epitaxy, in which such a 2DEG is absent at 300 K in the dark, a property previously not demonstrated. Illumination with ultra-violet light however, generates a 2DEG at the GaN/AlGaN interface and the heterostructure becomes electrically conductive. At temperatures below 150 K this photo-conductivity is persistent with an insignificant dependence of the 2D channel density on the optical excitation power. Residual donor impurity concentrations below 10$^{17}$ cm$^{-3}$ in the GaN/AlGaN layer stack are one necessity for our observations. Fabricated transistors manifest that these characteristics enable a future generation of normally-off as well as light-sensitive GaN-based device concepts.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is how to realize the intrinsically non - existent two - dimensional electron gas (2DEG) in ultra - pure gallium nitride/aluminum gallium nitride (GaN/AlGaN) heterostructures. In traditional GaN/AlGaN heterostructures, the triangular potential well formed at the interface due to the polarization effect is usually filled with electrons, thus forming a highly mobile 2DEG, which leads to the normally - on characteristic of the device, which is a disadvantage for some applications, especially in applications requiring high reliability. The paper reports an ultra - pure GaN/AlGaN layer stack grown by molecular beam epitaxy (MBE). In this material, the 2DEG does not exist at room temperature in the dark, a property that has not been demonstrated before. However, when irradiated with ultraviolet light, a 2DEG can be generated at the GaN/AlGaN interface, making the heterostructure conductive. At temperatures below 150K, this photoconductivity is persistent, and the dependence of the 2D channel density on the photo - excitation power is not significant. This finding is of great significance for the development of new normally - off and photosensitive GaN - based device concepts, because these characteristics can avoid the additional processing steps and costs required to convert the normally - on characteristic in traditional methods. In addition, the paper also explores the influence of the residual donor impurity concentration on the formation of 2DEG, and points out that an impurity concentration as low as below $10^{17} \, \text{cm}^{-3}$ is a necessary condition for observing these phenomena.

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