Abstract:In AlGaN/GaN heterostructure field effect transistors (HFETs), two-dimensional-electron-gas (2DEG), induced by strong piezoelectric and spontaneous polarization field, has high sheet density, and can be tuned up to 5 x 10(13) cm(-2) with pure AlN barrier.[Appl. Phys. Lett. 90, 182112 (2007)].For Al compositions larger than 40%, due to the large lattice mismatch between GaN and AlGaN, strain-related issues significantly reduce the mobility for these high sheet carrier densities. Recently, using nearly lattice-matched AlInN/GaN to improve the performance of HFETs has been studied theoretically and experimentally. A high sheet density (2.42 x 10(13) cm(2)) with >1000 cm(2) Ns mobility has been reported by inserting an AlN spacer layer between the AlGaN barrier and GaN channel. However, low-temperature mobilities for AlInN/GaN HFETs are much lower than those for AlGaN/GaN HFETs. In this paper, we study the Al1-xInxN/AlN/GaN (x=0.20 - 0.12) (HFETs) grown by metalorganic chemical vapor deposition. Reduction of In composition from 20% to 12% increased the room temperature equivalent two-dimensional-electron-gas (2DEG) density from 0.90 x 10(13) cm(-2) to 1.64 x 10(13) cm(-2) with corresponding electron mobilities of 1600 cm(2)/Vs and 1410 cm(2)/Vs. Furthermore, at 10 K, the mobility reached 17,600 cm(2) Ns with a sheet density 9.6 x 10(12) cm(-2) for the nearly lattice-matched Al0.82In0.18N /AlN/GaN heterostructure. The HFETs having 1 mu m gate length exhibited a maximum transconductance of - 250 mS/mm with good pinch-off characteristics.

AlGaN/GaN Heterostructure Field Effect Transistor Materials Grown by Molecular Beam Epitaxy

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

AIGaN/GaN Polarization-Induced Two-Dimensional Electron Gas Materials Grown by Radio-Frequency Plasma Assisted Molecular Beam Epitaxy

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

Two-Dimensional Electron Gas Materials with AlN/GaN Superlattice Structure Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

Al X in 1-X N/GaN Heterostructure Field Effect Transistors

Room Temperature 2DEG Mobility Above 2350 cm2/V·s in AlGaN/GaN HEMT Grown on GaN Substrate

High Electron Mobility in Nearly Lattice-Matched AlInN∕AlN∕GaN Heterostructure Field Effect Transistors

AlGaN/GaN/InGaN/GaN DH‐HEMTs Structure with an AlN Interlayer Grown by MOCVD

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy

Algan/Gan/Ingan/Gan Dh-Hemts with Gan Channel Layer Grown at High Temperature

MBE-grown AlGaN/GaN HEMTs with 186 mS/mm Transcond uctance

Inaln/Gan Heterostructure Field-Effect Transistors on Fe-Doped Semi-Insulating Gan Substrates

Improved Algan/Gan Hemts Grown on Si Substrates Using Stacked Algan/Aln Interlayer by Mocvd

MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer As Channel on SiC

High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

AlN/AlGaN heterojunction field-effect transistors with a high-AlN-mole-fraction Al0.72Ga0.28N channel grown on single-crystal AlN substrate by metalorganic chemical vapor deposition

Demonstration of Undoped Quaternary AlInGaN∕GaN Heterostructure Field-Effect Transistor on Sapphire Substrate

MOCVD grown AlGaN/AlN/GaN HEMT structure with compositionally step-graded AlGaN barrier layer

Strained GaN Quantum-Well FETs on Single Crystal Bulk AlN Substrates