Abstract:Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offering a tunable bandgap from 3.4 eV (GaN) to 6.1 eV (AlN) and remarkable material characteristics. However, achieving efficient p-type doping in high aluminum composition AlGaN remains a formidable challenge. This study presents an alternative approach to address this issue by fabricating a p+ Si/n-AlN/n+ AlGaN heterojunction structure by following the semiconductor grafting technique. Atomic force microscopy (AFM) analysis revealed that the AlN and the nanomembrane surface exhibited a smooth topography with a roughness of 1.96 nm and 0.545 nm, respectively. High-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) confirmed a sharp and well-defined Si/AlN interface, with minimal defects and strong chemical bonding, crucial for efficient carrier transport. X-ray photoelectron spectroscopy (XPS) measurements demonstrated a type-I heterojunction with a valence band offset of 2.73 eV-2.84 eV and a conduction band offset of 2.22 eV -2.11 eV. The pn diode devices exhibited a linear current-voltage (I-V) characteristic, an ideality factor of 1.92, and a rectification ratio of 3.3E4, with a turn-on voltage of indicating effective p-n heterojunction. Temperature-dependent I-V measurements showed stable operation up to 90 C. The heterojunction's high-quality interface and electrical performance showcase its potential for advanced AlGaN-based optoelectronic and electronic devices.

Strained GaN Quantum-Well FETs on Single Crystal Bulk AlN Substrates

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

First demonstration of strained AlN/GaN/AlN quantum well FETs on SiC

AlGaN/GaN Heterostructure Field Effect Transistor Materials Grown by Molecular Beam Epitaxy

AlN/GaN HEMTs with f max Exceeding 300 GHz by Using Ge-Doped n ++ GaN Ohmic Contacts

Electron mobility enhancement by electric field engineering of AlN/GaN/AlN quantum-well HEMTs on single-crystal AlN substrates

AlN/GaN HEMTs with Fmax Exceeding 300 GHz by Using Ge-Doped N++gan Ohmic Contacts

AlN/AlGaN heterojunction field-effect transistors with a high-AlN-mole-fraction Al0.72Ga0.28N channel grown on single-crystal AlN substrate by metalorganic chemical vapor deposition

Improved Algan/Gan Hemts Grown on Si Substrates Using Stacked Algan/Aln Interlayer by Mocvd

High-voltage kV-class AlN metal-semiconductor field-effect transistors on single-crystal AlN substrates

N-polar ScAlN and HEMTs grown by molecular beam epitaxy

Inaln/Gan Heterostructure Field-Effect Transistors on Fe-Doped Semi-Insulating Gan Substrates

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

Algan/Gan Hemts On Si By Mbe With Regrown Contacts And F(T)=153 Ghz

Stimulated Emission and Optical Gain in AlGaN Heterostructures Grown on Bulk AlN Substrates

Si/AlN p-n heterojunction interfaced with ultrathin SiO 2

Strain Release in GaN Epitaxy on 4 degrees Off-Axis 4H-SiC

High-resistivity Unintentionally Carbon-Doped GaN Layers with Nitrogen As Nucleation Layer Carrier Gas Grown by Metal-Organic Chemical Vapor Deposition

ScAlInN/GaN Heterostructures Grown by Molecular Beam Epitaxy

GaN/AlN superlattice high electron mobility transistor heterostructures on GaN/Si(111)

Si/AlN p-n heterojunction interfaced with ultrathin SiO2