Abstract:Aluminum nitride (AlN) is a promising ultrawide bandgap material with significant advantages for power electronics and optoelectronic applications due to its high breakdown voltage, mobility, and thermal conductivity. AlN Schottky barrier diodes (SBDs) and metal semiconductor field effect transistors (MESFETs) have shown potential but are limited by issues such as high off-state leakage current and complex structures to achieve ohmic contacts. To address these challenges, we report on the fabrication and characterization of an AlN metal oxide semiconductor field effect transistor (MOSFET) with a recessed gate structure. The source and drain contacts were fabricated on n-doped AlN epitaxy using Ti-based contacts with a Ti/Al/Ti/Au metal stack. To evaluate the performance of these contacts, a circular transmission line model (CTLM) was employed, and contacts were annealed at various temperatures ranging from 750 to 950 °C in a nitrogen ambient. Our results reveal that unannealed Ti-based contacts on AlN showed no current conduction. However, annealing these contacts at 950 °C for 30 s significantly reduced the specific contact resistance to 0.148 Ω·cm 2 , achieving an ~80% reduction compared to samples annealed at 750 °C. Utilizing these optimized contact conditions, we fabricated, to the best of our knowledge, the first AlN MOSFET. The fabricated AlN MOSFET exhibits a threshold voltage of −10.91 V, an effective mobility of 2.95 cm 2 /Vs, an on-off current ratio spanning two orders of magnitude, and a reverse breakdown voltage of approximately ~250 V in air without a field plate.

High-voltage kV-class AlN metal-semiconductor field-effect transistors on single-crystal AlN substrates

Demonstration of aluminum nitride metal oxide semiconductor field effect transistor on sapphire substrate

3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD

Fabrication and analysis of InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors based on AlN/GaN superlattice channel

AlGaN/GaN High Electron Mobility Transistors with a Low Sub-Threshold Swing on Free-Standing GaN Wafer

Strained GaN Quantum-Well FETs on Single Crystal Bulk AlN Substrates

AlN/AlGaN heterojunction field-effect transistors with a high-AlN-mole-fraction Al0.72Ga0.28N channel grown on single-crystal AlN substrate by metalorganic chemical vapor deposition

High Voltage InAlN/GaN HFETs Achieved by Schottky-Contact Technology for Power Applications

High Breakdown Voltage InAlN/AlN/GaN HEMTs Achieved by Schottky-Source Technology

Ultra-thin AlGaN/GaN HFET with a high breakdown voltage on sapphire substrates

Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor

High-Performance GaN HEMTs on Single Crystalline AlN Templates with a 230 Nm Ultra-Thin Buffer and Al2O3/SiO2 Passivation

High Performance AlGaN/GaN Power Switch with Si3N4insulation

Suppressing the Leakage of GaN HEMTs on Single-Crystalline AlN Templates by Buffer Optimization

AlN/GaN HEMTs with f max Exceeding 300 GHz by Using Ge-Doped n ++ GaN Ohmic Contacts

Improved Electrical and Deep-UV Sensing Characteristics of Al2O3-Dielectric AlGaN/AlN/SiC MOS-HFETs

High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate

5.3A/400V Normally-off AlGaN/GaN-on-Si MOS-HEMT with High Threshold Voltage and Large Gate Swing

Algan/Gan Metal-Insulator-Semiconductor High Electron Mobility Transistors with Reduced Leakage Current and Enhanced Breakdown Voltage Using Aluminum Ion Implantation

Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates

AlN/GaN HEMTs with Fmax Exceeding 300 GHz by Using Ge-Doped N++gan Ohmic Contacts