Abstract:In this work, high-efficiency millimeter-wave enhancement-mode (E-mode) Fin-high electron mobility transistor (HEMT) is fabricated to satisfy low-voltage terminal applications, whose fabrication process is performed on the in situ SiN passivated ultrathin-barrier AlGaN/GaN heterojunction and features N $_{ ext{2}}$ O plasma oxidation treatment on the fins. Specifically, the fabricated E-mode Fin-HEMT exhibits a positive threshold voltage of 0.3 V, at the cost of decreased maximum output current density of 483 mA/mm and lowered peak extrinsic transconductance of 277 mS/mm. Comfortingly, a reduced knee voltage of 1.5 V together with suppressed OFF-state leakage current of 6 $ imes$ 10 $^{- ext{6}}$ mA/mm is also obtained for Fin-HEMT. Besides, an OFF-state breakdown voltage of 38 V is achieved, which is sufficiently high to meet the low-voltage RF device’s need for breakdown voltage. Pulsed $ extit{I}$ – $ extit{V}$ measurement shows that a negligible current collapse (CC) is achieved for Fin-HEMT. Additionally, Fin-HEMT demonstrates a good stability by stress reliability test. Subsequently, the $ extit{f}_{ extit{T}}$ / $ extit{f}_{ ext{MAX}}$ value of 40/86 GHz is obtained for Fin-HEMT at $ extit{V}_{ ext{DS}}$ of 6 V by small signal measurement. Eventually, the millimeter-wave low-voltage load pull measurement shows that the fabricated E-mode Fin-HEMT is able to deliver a decent power added efficiency (PAE) of 55% at 30 GHz and $ extit{V}_{ ext{DS}}$ of 6 V, revealing the great potential of the fin configuration combined with ultrathin-barrier AlGaN/GaN heterojunction passivated by in situ SiN and N $_{ ext{2}}$ O plasma oxidation treatment in high-efficiency millimeter-wave low-voltage terminal applications.

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