Abstract:In this study, we demonstrate breakdown voltage at 1500 V of GaN on a QST power device. The high breakdown voltage and low current collapse performance can be attributed to the higher quality of GaN buffer layers grown on QST substrates. This is primarily due to the matched coefficient of thermal expansion (CTE) with GaN and the enhanced mechanical strength. Based on computer-aided design (TCAD) simulations, the strong electric-field-induced trap-assisted thermionic field emissions (TA-TFEs) in the GaN on QST could be eliminated in the GaN buffer. This demonstration showed the potential of GaN on QST, and promises well-controlled performance and reliability under high-power operation conditions.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to achieve a higher breakdown voltage and more stable performance in high - power electronic devices. Specifically, by growing AlGaN/GaN high - electron - mobility transistors (HEMTs) on Qromis Substrate Technology (QST) substrates, the researchers aim to overcome the challenges existing in traditional silicon (Si) substrates under high - voltage operating conditions, such as the difficulty in achieving a high breakdown voltage exceeding 1200V for thick epitaxial layer stacks due to low thermal conductivity, and problems such as large leakage current. The paper mentions that using QST substrates can significantly improve the quality of the GaN buffer layer, which is mainly attributed to the better coefficient of thermal expansion (CTE) match between the QST substrate and GaN and the enhanced mechanical strength. These improvements help to reduce trap - assisted thermionic field emission (TA - TFE) caused by strong electric fields, thereby achieving a breakdown voltage of up to 1500V in the GaN/QST structure, which is a significant improvement compared to 1200V in the GaN/Si structure. In addition, the research also verified the effectiveness of these improvements through computer - aided design (TCAD) simulations, and explored the effects of carbon - doped GaN (GaN:C) buffer layers of different thicknesses on leakage current and breakdown voltage, further demonstrating the potential of QST substrates in improving the performance and reliability of GaN HEMTs. These findings are of great significance for the development of next - generation high - efficiency power devices.

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