Abstract:The combination of ultrathin-barrier (UTB) AlGaN (<; 6 nm)/GaN heterostructure and a charge-modulated SiNx grown by low-pressure chemical vapor deposition (LPCVD) is a promising technique for development of GaN-based millimeter-wave power amplifiers and recessfree enhancement-mode (E-mode) power switches. The LPCVD-SiN x passivation is capable of inducing high density of positive charges at the SiN x /(Al)GaN interface (~3.50 × 10 13 cm -2 ), ensuring efficient recovery of 2-D electron gas (2-DEG) density that is comparable with conventional AlGaN/GaN heterostructure. Temperature-dependent Hall measurements and scattering mechanism simulations confirm the positive interfacial charges as well as interface states with density below 10 13 cm -2 and exert weak remote coulombic scattering of 2-DEG in metal-insulator- semiconductor heterojunction field-effect transistors (MIS-HFETs), which warrants a low ON-resistance of UTBAlGaN/GaN-based devices. UTB-AlGaN (<; 6 nm)/GaN heterostructure with LPCVD-SiN x passivation is a compelling technology platform for fabrication of high-frequency power amplifiers and high-efficiency E-mode power switches.

Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

Interface Charge Engineering in Down-Scaled AlGaN (<6 Nm)/gan Heterostructure for Fabrication of GaN-based Power HEMTs and MIS-HEMTs

Interface Charge Effects on 2-D Electron Gas in Vertical-Scaled Ultrathin-Barrier AlGaN/GaN Heterostructure

On-chip AlGaN/GaN HEMTs with the Compatible Normally-off p-GaN Gate and Normally-on MIS Gate Fabrication Processes

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

High-Performance GaN HEMTs on Single Crystalline AlN Templates with a 230 Nm Ultra-Thin Buffer and Al2O3/SiO2 Passivation

Suppressing the Leakage of GaN HEMTs on Single-Crystalline AlN Templates by Buffer Optimization

High-Efficiency Millimeter-Wave Enhancement-Mode Ultrathin-Barrier AlGaN/GaN Fin-HEMT for Low-Voltage Terminal Applications

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine Treatment

Normally-off AlN/β-Ga2O3 Field-Effect Transistors Using Polarization-Induced Doping

A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices

A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication

Gate-Recessed Normally-OFF GaN MOSHEMT with Improved Channel Mobility and Dynamic Performance Using AlN/Si 3 N 4 As Passivation and Post Gate-Recess Channel Protection Layers

Presence of High Density Positive Fixed Charges at ALD–Al2O3/GaN (cap) Interface for Efficient Recovery of 2‐DEG in Ultrathin‐Barrier AlGaN/GaN Heterostructure

High-performance high electron mobility transistors with GaN/InGaN composite channel and superlattice back barrier

AlGaN/GaN High Electron Mobility Transistors with a Low Sub-Threshold Swing on Free-Standing GaN Wafer

Si/AlN p-n heterojunction interfaced with ultrathin SiO2

High-performance normally off p-GaN gate high-electron-mobility transistor with In 0.17 Al 0.83 N barrier layer design

Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT