Abstract:The polarization discontinuity across interfaces in polar nitride-based heterostructures can lead to the formation of two-dimensional electron and hole gases. In the past, the observation of these electron and hole gases has been achieved through various experimental techniques, most often by electronic measurements but occasionally by optical means. However, the occurrence of a two-dimensional hole gas has never been demonstrated optically. The objective of this article is to demonstrate, thanks to the combination of various optical spectroscopy techniques coupled to numerical simulations, the presence of a two-dimensional hole gas in a GaN/AlGaN/GaN heterostructure. This is made possible thanks to a GaN/AlGaN/GaN heterostructure displaying a micrometer-thick AlGaN layer and a GaN cap thicker than in conventional GaN-based HEMTs structures. The band structure across the whole heterostructure was established by solving self-consistently the Schrödinger and Poisson equations and by taking into account the experimentally determined strain state of each layer. Continuous and quasi-continuos photoluminescence reveal the presence of a broad emission band at an energy around 50 meV below the exciton emission and whose energy blueshifts with increasing excitation power density, until it is completely quenched due to the complete screening of the internal electric field. Time-resolved measurements show that the emission arising from the two-dimensional hole gas can be assigned to the recombination of holes in the potential well with electrons located in the top GaN as well as electron from the bottom AlGaN, each of them displaying different decay times due to unequal electric fields. Besides the optical demonstration of a two-dimensional hole gas in a nitride-based heterostructure, our work highlights the optical recombination processes involved in the emission from such a hole gas.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to experimentally prove for the first time the existence of two - dimensional hole gas (2DHG) in GaN/AlGaN/GaN heterostructures by means of optical spectroscopy techniques. Specifically, the objectives of the paper include: 1. **Combination of theory and experiment**: Use a combination of multiple optical spectroscopy techniques (such as continuous and quasi - continuous micro - photoluminescence measurements) and numerical simulations to prove the existence of two - dimensional hole gas in specific structures. 2. **Structure design**: A GaN/AlGaN/GaN heterostructure with a micron - thick AlGaN layer and a GaN cap layer thicker than that in conventional high - electron - mobility transistors (HEMTs) has been studied. This design enables the internal electric field to be effectively maintained, which is conducive to the formation of 2DHG. 3. **Analysis of optical properties**: Through photoluminescence measurements in a wide range of photo - excitation intensities, a broad emission band related to 2DHG has been revealed, and the phenomenon that its energy blueshifts with the increase of excitation power density has been observed. In addition, time - resolved measurements show that this emission can be attributed to the recombination of holes in 2DHG with electrons in the top GaN layer or the bottom AlGaN layer. 4. **Effect of internal electric field**: The effect of the internal electric field on the optical recombination process has been studied, especially the phenomenon that the 2DHG - related emission band disappears when the internal electric field is completely screened at high excitation power. ### Main contributions - **First optical confirmation**: This is the first time that the existence of two - dimensional hole gas in nitride - based heterostructures has been directly confirmed by optical means. - **Rich optical recombination mechanisms**: The study has revealed the complex optical recombination mechanisms related to 2DHG, including multi - path recombination processes with different decay times. ### Research background In previous studies, although two - dimensional electron gas and hole gas have been observed by electron measurements and other optical methods, the existence of two - dimensional hole gas has never been directly confirmed by optical means. Therefore, this paper fills this gap in this field and provides new perspectives and tools for future research. ### Formula summary The key formulas involved in the paper include: - The relationship between A - exciton transition energy and stress in GaN: \[ E_{Xn = 1}^{A}=3478 - 1.53\sigma_1\quad(1) \] - Total polarization (spontaneous polarization + piezoelectric polarization): \[ P = P_{sp}+P_{pz}\quad(2) \] - Surface charge density: \[ \sigma=\left\|\vec{P}_{\text{top}}\right\|-\left\|\vec{P}_{\text{bottom}}\right\|\quad(6) \] These formulas help to explain the charge accumulation and polarization phenomena in heterostructures, thus supporting the theoretical basis for the existence of 2DHG.

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