Abstract:The polarization discontinuity across interfaces in polar nitride-based heterostructures can lead to the formation of two-dimensional electron and hole gases. In the past, the observation of these electron and hole gases has been achieved through various experimental techniques, most often by electronic measurements but occasionally by optical means. However, the occurrence of a two-dimensional hole gas has never been demonstrated optically. The objective of this article is to demonstrate, thanks to the combination of various optical spectroscopy techniques coupled to numerical simulations, the presence of a two-dimensional hole gas in a GaN/AlGaN/GaN heterostructure. This is made possible thanks to a GaN/AlGaN/GaN heterostructure displaying a micrometer-thick AlGaN layer and a GaN cap thicker than in conventional GaN-based HEMTs structures. The band structure across the whole heterostructure was established by solving self-consistently the Schrödinger and Poisson equations and by taking into account the experimentally determined strain state of each layer. Continuous and quasi-continuos photoluminescence reveal the presence of a broad emission band at an energy around 50 meV below the exciton emission and whose energy blueshifts with increasing excitation power density, until it is completely quenched due to the complete screening of the internal electric field. Time-resolved measurements show that the emission arising from the two-dimensional hole gas can be assigned to the recombination of holes in the potential well with electrons located in the top GaN as well as electron from the bottom AlGaN, each of them displaying different decay times due to unequal electric fields. Besides the optical demonstration of a two-dimensional hole gas in a nitride-based heterostructure, our work highlights the optical recombination processes involved in the emission from such a hole gas.

Magnetoresistance analysis of two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Transport and Spin Properties of the Two-Dimensional Electron Gas in GaN-based Heterostructures

Zeeman Spin Splitting of 2DEG in Al_xGa_(1-x)N/GaN Heterostructures

Magneto-Resistance for Two-Dimensional Electron Gas in Gan/Alxga1-Xn Heterostructure

Effective Mass of the Two-Dimensional Electron Gas and Band Nonparabolicity in AlxGa1−xN∕GaN Heterostructures

Magnetotransport properties of two-dimensional electron gas in AlxGa(1-x)N/GaN heterostructures

Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures

Oscillatory Magnetoresistance of the Two-dimensional Electron Gas in Al[sub X]ga[sub 1−x]n∕gan Heterostructures in Tilted Magnetic Fields

Influence of the Magnetic Field on the Effective Mass of the Two‐dimensional Electron Gas in Alx Ga1–xN/GaN Heterostructures

Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

Two-dimensional electron gas density in high Al content AlxGa1-xN/GaN double heterostructure

Experimental demonstration of a Two-Dimensional Hole Gas (2DHG) in a GaN/AlGaN/GaN based heterostructure by optical spectroscopy

Non-monotonic magnetic field and density dependence of in-plane magnetoresistance in dilute two-dimensional holes in GaAs/AlGaAs

Transport properties of the two-dimensional electron gas in A/sub x/Ga/sub 1-x/N/GaN heterostructures

Magnetotransport Properties of High Equivalent Al Composition AlGaN/GaN Heterostructures Using AlN/GaN Superlattice As a Barrier

Magnetoresistance and Symmetry of a Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterostructures

Magnetotransport in Zener Tunneling Regime in a High-Mobility Two-Dimensional Hole Gas

Beating Patterns in the Oscillatory Magnetoresistance Originatedfrom Zero-Field Spin Splitting in AlxGa1−xN∕GaN Heterostructures

Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas

Theoretical Study of Improved Two‐dimensional Electron Gas Density in AlGaN/GaN/AlGaN Double Heterostructure