Abstract:The formation of a two-dimensional electron gas (2DEG) at the GaN (0001)/AlN interface holds significant implications for GaN-based high-voltage and high-frequency (RF) devices. Due to the promising results provided by the addition of a thin layer of AlN in metal–oxide-semiconductor channel high-electron-mobility transistor devices, this interface can be found in both the access region and near the dielectric gate. Recent ab initio simulations shed light on the crucial role played by spontaneous and piezoelectric polarizations within polar GaN and AlN crystals in driving the formation of the 2DEG. This study explores the underlying mechanisms behind the 2DEG formation and investigates the impact of fixed charges and additional layers, like Al2O3, on the carrier concentration. Consistent with the literature, our findings highlight the predominant role of polarizations within III–V materials in the formation of the 2DEG. Moreover, we examine the influence of fixed charges on the AlN surface, revealing their ability to accumulate or deplete the 2DEG, while maintaining charge conservation through the emergence of a new two-dimensional charge gas on the AlN surface. Additionally, we explore the effects of incorporating a β-Al2O3 crystal layer on the GaN/AlN structure, finding that the 2DEG’s carrier density is reduced, yet not entirely eliminated, while a significant positive charge concentration at the AlN/Al2O3 interface pins the Fermi level. This comprehensive investigation contributes to our understanding of microscopic phenomena in III–V heterostructures, paving the way for future advancements and applications in power electronics.

Study Of Two-Dimensional Electron Gas In Aln/Gan Heterostructure By A Self-Consistent Method

Two-Dimensional Electron Gas Densities in Algan/Aln/Gan Heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Designing Two-Dimensional Electron Gas in AlGaN/InGaN/GaN Heterostructures Through the Incorporated InGaN Layer

Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

Investigation on two-dimensional electron gas in AlxGa1-xN/GaN heterostructures by using Schottky C-V measurement

Influnce of Al-content on the Property of the Two-Dimensional Electron Gases in AlxGa1-xN/GaN Heterostructures

Theoretical Study of Improved Two‐dimensional Electron Gas Density in AlGaN/GaN/AlGaN Double Heterostructure

Two-dimensional electron gas density in high Al content AlxGa1-xN/GaN double heterostructure

Influence of Doping on the Two-Dimensional Electron Gas Distribution in Algan/Gan Heterostructure Transistors

One-dimensional self-consistent numerical model and two-dimensional electron gases for AlGaN/GaN

Investigation into the Energy Band Diagram and Charge Distribution in AlGaN/GaN Double Heterostructures by Self-Consistent Poisson–Schrödinger Calculations

Three Subband Occupation of the Two‐Dimensional Electron Gas in Ultrathin Barrier AlN/GaN Heterostructures

Influence of Polarizations and Doping in AlGaN Barrier on the Two-Dimensional Electron-Gas in AlGaN/GaN Heterostruture

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Ab initio investigations of two-dimensional carrier gas at interfaces in GaN/AlN and GaN/AlN/Al2O3 heterostructures

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

Magnetotransport Properties of High Equivalent Al Composition AlGaN/GaN Heterostructures Using AlN/GaN Superlattice As a Barrier

Function of Quantum-Confinement Effect in the AlGaN∕AlN∕GaN Heterostructure with an AlN Interfacial Layer

Tuning electrical and thermal conductivities of the two-dimensional electron gas in AlN/GaN heterostructures by piezoelectricity

The inherently absent 2-dimensional electron gas in ultra-pure GaN/AlGaN heterostructures