Abstract:The formation of a two-dimensional electron gas (2DEG) at the GaN (0001)/AlN interface holds significant implications for GaN-based high-voltage and high-frequency (RF) devices. Due to the promising results provided by the addition of a thin layer of AlN in metal–oxide-semiconductor channel high-electron-mobility transistor devices, this interface can be found in both the access region and near the dielectric gate. Recent ab initio simulations shed light on the crucial role played by spontaneous and piezoelectric polarizations within polar GaN and AlN crystals in driving the formation of the 2DEG. This study explores the underlying mechanisms behind the 2DEG formation and investigates the impact of fixed charges and additional layers, like Al2O3, on the carrier concentration. Consistent with the literature, our findings highlight the predominant role of polarizations within III–V materials in the formation of the 2DEG. Moreover, we examine the influence of fixed charges on the AlN surface, revealing their ability to accumulate or deplete the 2DEG, while maintaining charge conservation through the emergence of a new two-dimensional charge gas on the AlN surface. Additionally, we explore the effects of incorporating a β-Al2O3 crystal layer on the GaN/AlN structure, finding that the 2DEG’s carrier density is reduced, yet not entirely eliminated, while a significant positive charge concentration at the AlN/Al2O3 interface pins the Fermi level. This comprehensive investigation contributes to our understanding of microscopic phenomena in III–V heterostructures, paving the way for future advancements and applications in power electronics.

Tuning electrical and thermal conductivities of the two-dimensional electron gas in AlN/GaN heterostructures by piezoelectricity

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Study Of Two-Dimensional Electron Gas In Aln/Gan Heterostructure By A Self-Consistent Method

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

Hysteresis Phenomena of the Two Dimensional Electron Gas Density in Lattice-Matched Inaln/Gan Heterostructures

Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier

High-temperature Transport Properties of 2DEG in AlGaN/GaN Heterostructures

Optimization of Two-Dimensional Electron Gases and I–V Characteristics for AlGaN/GaN HEMT Devices

Subbands Transport of the Two-Dimensional Electron Gas in AlxGa1−xN/GaN Heterostructures

Ab initio investigations of two-dimensional carrier gas at interfaces in GaN/AlN and GaN/AlN/Al2O3 heterostructures

Designing Two-Dimensional Electron Gas in AlGaN/InGaN/GaN Heterostructures Through the Incorporated InGaN Layer

Multisubband Transport Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

High Temperature Dependence of the Density of Two-Dimensional Electron Gas in Al 0.18 Ga 0.82 N/GaN Heterostructures

Interface roughness governed negative magnetoresistances in two-dimensional electron gases in AlGaN/GaN heterostructures

Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures

Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

Origin of the Novel Magnetoresistance Oscillation of the Two-Dimensional Electron Gas in Alxga1-Xn/Gan Heterostructures

Diffusion and Ballistic Contributions of Electron–electron Interaction to the Conductivity in an Al0.26Ga0.74N/AlN/GaN Heterostructure

Transport Properties of Two-Dimensional Electron Gas in Different Subbands in Triangular Quantum Wells at AlxGa1−xN/GaN Heterointerfaces