Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures
Z. L. Miao,N. Tang,F. J. Xu,L. B. Cen,K. Han,J. Song,C. C. Huang,T. J. Yu,Z. J. Yang,X. Q. Wang,G. Y. Zhang,B. Shen,K. Wei,J. Huang,X. Y. Liu
DOI: https://doi.org/10.1063/1.3525989
IF: 2.877
2011-01-01
Journal of Applied Physics
Abstract:Magnetotransport properties of the two-dimensional electron gas (2DEG) in lattice-matched In0.18Al0.82N/AlN/GaN heterostructures have been studied at low temperatures and high magnetic fields. The double subband occupancy of the 2DEG in the triangular quantum well at the heterointerface is observed. The 2DEG density is determined to be 2.09×1013 cm−2 and the energy separation between the first and the second subbands is 191 meV. Both of them are significantly higher than those in AlxGa1−xN/AlN/GaN heterostructures owing to the stronger spontaneous polarization effect. The evident difference of the quantum scattering times in the two subbands of the 2DEG indicates that the interface roughness scattering plays an important role in the transport properties of the 2DEG in InxAl1−xN/AlN/GaN heterostructures.