Abstract:<math> β</math>-Gallium oxide (<math> β - G a 2 O 3</math>) is an emerging wide bandgap semiconductor with potential applications in power and RF electronic systems. Previous theoretical calculation on a two-dimensional electron gas (2DEG) in <math> β - ( A l x G a 1 − x ) 2 O 3 / G a 2 O 3</math> heterostructures, taking only polar optical and remote impurity scattering into account, shows improved mobility compared to bulk <math> β - G a 2 O 3</math>. However, the experimental results in 2DEGs have not achieved the predicted mobility values. In this work, we perform more comprehensive calculations to study the low field 2DEG transport properties in the <math> β - ( A l x G a 1 − x ) 2 O 3 / G a 2 O 3</math> heterostructures. A self-consistent Poisson–Schrödinger simulation of a heterostructure is used to obtain the sub-band energies and the wavefunctions in the quantum well. The phonon dispersion is calculated based on the ab initio methods under the density functional theory and density functional perturbation theory frameworks. The different scatterings that are included in the calculation are due to phonons (polar and non-polar), remote impurities, the alloy disorder, and interface roughness. We include a full dynamic screening of polar optical phonons. We report the temperature dependent low-field electron mobility as a function of 2DEG density. The overall mobility is found to be increasing with electron density with an exception at low density where the antiscreening of LO phonons reduces mobility. The effect of spacer thickness, aluminum fraction, and roughness parameters on mobility is shown to be critically important. The effect of the confinement direction on 2DEG mobility is found to be small and comparable to bulk. A comparison of calculated mobility values with experimentally reported data shows a good agreement.

NUMERICAL CALCULATION OF THE ELECTRON MOBILITY IN GaAs SEMICONDUCTOR UNDER WEAK ELECTRIC FIELD APPLICATION

Electron Mobility Calculations and Scattering Effects in GaN Compound Semiconductor

Generalized Transport-Band Field-Effect Mobility in Disordered Organic and Inorganic Semiconductors

Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

Low field transport calculation of 2-dimensional electron gas in β - ( A l x G a 1 − x ) 2 O 3 / G a 2 O 3 heterostructures

Low-temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped Pseudomorphic N-AlGaAs/GaInAs/GaAs Structures

Ab initio calculation of carrier mobility in semiconductors including ionized-impurity scattering

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Mobility Anisotropy of Two-Dimensional Semiconductors

Mobility of Two-Dimensional Electron Gas in Gaas-Algaas Heterojunctions (Ii)

Effect of Electric Field On Electron Mobility in Sub-100 nm InAlN/GaN High Electron Mobility Transistors

Role of Ionized Impurity and Interface Roughness Scatterings in the Electronic Transport of InAs/GaSb Type II Superlattices at Low Temperatures

Guidelines for accurate and efficient calculations of mobilities in two-dimensional materials

Phonon-limited electron mobility in Si, GaAs and GaP with exact treatment of dynamical quadrupoles

Ab initio Calculation of the Effective Thermal Conductivity Coefficient of a Superlattice Using the Boltzmann Transport Equation

Study of the Electron Mobility in InAs/GaSb Type II Superlattices at High Temperatures

Multisubband electron mobility in a parabolic quantum well structure under the influence of an applied electric field

Monte Carlo Simulation of Electron Transport in Degenerate Semiconductors

Temperature dependence of the low-field mobility of a very narrow miniband in the degenerate case

Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors

Electron mobility and energy relaxation rate in GaAs/GaAlAs superlattice