Abstract:Semiconductor superlattices have been extensively investigated for thermoelectric applications, to explore the effects of compositions, interface structures, and lattice strain environments on the reduction of thermal conductivity, and improvement of efficiency. Most studies assumed that their electronic properties remain unaffected compared to their bulk counterparts. However, recent studies demonstrated that electronic properties of silicon (Si)/germanium (Ge) superlattices show significant variations depending on compositions and growth substrates. These studies used a constant relaxation time approximation, and ignored the effects of electron scattering processes. Here, we consider electron scattering with phonons and ionized impurities, and report first-principles calculations of electronic transport properties including the scattering rates. We investigate two classes of Si/Ge superlattices: superlattices with varied compositions grown on identical substrates and with identical compositions but grown on different substrates. We illustrate the relationship between the energy bands of the superlattices and the electron-phonon relaxation times. We model the electron-ionized impurity interaction potentials by accounting for the in-plane and the cross-plane structural anisotropy. Our analysis reveals that the inclusion of electron-phonon and electron-impurity scattering processes can lead to ~1.56-fold improved peak power-factors, compared to that of bulk Si. We observe that superlattices can also display dramatically reduced power-factors for specific lattice strain environments. Such reduction could cancel out thermoelectric efficiency improvements due to reduced thermal conductivities. Our study provides insight to predict variation of electronic properties due to changes in lattice strain environments, essential for designing superlattices with optimized electronic properties.

Role of Ionized Impurity and Interface Roughness Scatterings in the Electronic Transport of InAs/GaSb Type II Superlattices at Low Temperatures

Study of the Electron Mobility in InAs/GaSb Type II Superlattices at High Temperatures

Vertical transport in InAs/GaSb superlattice: role of ionized impurity and interface roughness scatterings

A study of vertical and in-plane electron mobility due to interface roughness scattering at low temperature in InAs/GaSb type-II superlattices

On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers

Effect of Electron-Phonon and Electron-Impurity Scattering on Electronic Transport Properties of Silicon/Germanium Superlattices

Low-temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped Pseudomorphic N-AlGaAs/GaInAs/GaAs Structures

Ab initio Calculation of the Effective Thermal Conductivity Coefficient of a Superlattice Using the Boltzmann Transport Equation

Electron mobility and energy relaxation rate in GaAs/GaAlAs superlattice

Screening and transport in 2D semiconductor systems at low temperatures

Scattering mechanisms of highest-mobility InAs/Al$_{x}$Ga$_{1-x}$Sb quantum wells

NUMERICAL CALCULATION OF THE ELECTRON MOBILITY IN GaAs SEMICONDUCTOR UNDER WEAK ELECTRIC FIELD APPLICATION

Electronic and optical properties of InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattices and their application to far-infrared detectors

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Ballistic transport and boundary scattering in InSb/InxAl1-xSb mesoscopic devices

Thermal conductivity of InAs/GaSb superlattice

Calculation of the effective thermal conductivity of a superlattice based on the Boltzmann transport equation using first-principle calculations

High-field transport in semiconductor superlattices for interacting Wannier-Stark levels

Calculating Interface Transport Parameters at Finite Temperatures: Nonmagnetic Interfaces

Temperature-Dependent Electron Mobility in Inas Nanowires

Transport in InAs/GaSb Quantum Spin Hall Insulators with High-K Dielectrics As the Top Barrier